Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition

Pei Zhao, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).

Original languageEnglish
Pages (from-to)3619-3622
Number of pages4
JournalSurface and Coatings Technology
Issue number21-22
Publication statusPublished - 2010 Aug


  • CeO film
  • High deposition rate
  • Laser chemical vapor deposition

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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