Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition

Pei Zhao; Akihiko Ito; Rong Tu; Takashi Goto

doi:10.1016/j.surfcoat.2010.04.037

Preparation of highly (100)-oriented CeO₂ films on polycrystalline Al₂O₃ substrates by laser chemical vapor deposition

Pei Zhao, Akihiko Ito, Rong Tu, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

CeO₂ films were prepared on Al₂O₃ substrates by laser chemical vapor deposition at different laser power (P_L) up to 182W. The (100)-oriented CeO₂ films were prepared at P_L=101-167W (T_dep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at P_L=113W (T_dep=836K). The (100)-oriented CeO₂ films consisted of granular grains and showed a columnar cross section. The deposition rates (R_dep) of (100)-oriented CeO₂ films showed a maximum of 43μmh^-1 at P_L=152W (T_dep=912K).

Original language	English
Pages (from-to)	3619-3622
Number of pages	4
Journal	Surface and Coatings Technology
Volume	204
Issue number	21-22
DOIs	https://doi.org/10.1016/j.surfcoat.2010.04.037
Publication status	Published - 2010 Aug

Keywords

CeO film
High deposition rate
Laser chemical vapor deposition

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.surfcoat.2010.04.037

Cite this

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title = "Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition",

abstract = "CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).",

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T1 - Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition

AU - Zhao, Pei

AU - Ito, Akihiko

AU - Tu, Rong

AU - Goto, Takashi

PY - 2010/8

Y1 - 2010/8

N2 - CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).

AB - CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).

KW - CeO film

KW - High deposition rate

KW - Laser chemical vapor deposition

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