Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition

Pei Zhao; Akihiko Ito; Rong Tu; Takashi Goto

doi:10.1016/j.surfcoat.2010.04.037

Preparation of highly (100)-oriented CeO₂ films on polycrystalline Al₂O₃ substrates by laser chemical vapor deposition

Pei Zhao, Akihiko Ito, Rong Tu, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

CeO₂ films were prepared on Al₂O₃ substrates by laser chemical vapor deposition at different laser power (P_L) up to 182W. The (100)-oriented CeO₂ films were prepared at P_L=101-167W (T_dep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at P_L=113W (T_dep=836K). The (100)-oriented CeO₂ films consisted of granular grains and showed a columnar cross section. The deposition rates (R_dep) of (100)-oriented CeO₂ films showed a maximum of 43μmh^-1 at P_L=152W (T_dep=912K).

Original language	English
Pages (from-to)	3619-3622
Number of pages	4
Journal	Surface and Coatings Technology
Volume	204
Issue number	21-22
DOIs	https://doi.org/10.1016/j.surfcoat.2010.04.037
Publication status	Published - 2010 Aug

Keywords

CeO film
High deposition rate
Laser chemical vapor deposition

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition",

abstract = "CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).",

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T1 - Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition

AU - Zhao, Pei

AU - Ito, Akihiko

AU - Tu, Rong

AU - Goto, Takashi

PY - 2010/8

Y1 - 2010/8

N2 - CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).

AB - CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2 films were prepared at PL=101-167W (Tdep=792-945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2 films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2 films showed a maximum of 43μmh-1 at PL=152W (Tdep=912K).

KW - CeO film

KW - High deposition rate

KW - Laser chemical vapor deposition

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