Preparation of high-purity Cu films by non-mass separated ion beam deposition

J. W. Lim, K. Mimura, K. Miyake, M. Yamashita, M. Isshiki

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs+ ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.

Original languageEnglish
Pages (from-to)371-376
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - 2003 May
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: 2002 Sep 12002 Sep 6

Keywords

  • Bias voltage
  • Copper
  • Impurity
  • Ion beam
  • Purification
  • Secondary ion mass spectrometry

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Preparation of high-purity Cu films by non-mass separated ion beam deposition'. Together they form a unique fingerprint.

Cite this