Preparation of high-purity Cu films by non-mass separated ion beam deposition

J. W. Lim; K. Mimura; K. Miyake; M. Yamashita; M. Isshiki

doi:10.1016/S0168-583X(03)00765-1

Preparation of high-purity Cu films by non-mass separated ion beam deposition

J. W. Lim, K. Mimura, K. Miyake, M. Yamashita, M. Isshiki

Division of Inorganic Material Research

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs⁺ ion beam, the Cu film deposited at V_S=0 V was found to contain more impurities than the Cu film deposited at V_S=-50 V. On the other hand, from the SIMS results with O₂⁺ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at V_S=0 V. As a result, higher-purity Cu film deposited at V_S=-50 V could be obtained in comparison with the film deposited at V_S=0 V. The purification effect of the Cu film deposited at V_S=-50 V was described in details.

Original language	English
Pages (from-to)	371-376
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00765-1
Publication status	Published - 2003 May
Event	13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 2002 Sep 1 → 2002 Sep 6

Keywords

Bias voltage
Copper
Impurity
Ion beam
Purification
Secondary ion mass spectrometry

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(03)00765-1

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@article{cd0043392ee444c2a54661be61600a36,

title = "Preparation of high-purity Cu films by non-mass separated ion beam deposition",

abstract = "Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs+ ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.",

keywords = "Bias voltage, Copper, Impurity, Ion beam, Purification, Secondary ion mass spectrometry",

author = "Lim, {J. W.} and K. Mimura and K. Miyake and M. Yamashita and M. Isshiki",

year = "2003",

month = may,

doi = "10.1016/S0168-583X(03)00765-1",

language = "English",

volume = "206",

pages = "371--376",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

note = "13th International conference on Ion beam modification of Mate ; Conference date: 01-09-2002 Through 06-09-2002",

}

TY - JOUR

T1 - Preparation of high-purity Cu films by non-mass separated ion beam deposition

AU - Lim, J. W.

AU - Mimura, K.

AU - Miyake, K.

AU - Yamashita, M.

AU - Isshiki, M.

PY - 2003/5

Y1 - 2003/5

N2 - Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs+ ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.

AB - Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs+ ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.

KW - Bias voltage

KW - Copper

KW - Impurity

KW - Ion beam

KW - Purification

KW - Secondary ion mass spectrometry

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U2 - 10.1016/S0168-583X(03)00765-1

DO - 10.1016/S0168-583X(03)00765-1

M3 - Conference article

AN - SCOPUS:0038751823

VL - 206

SP - 371

EP - 376

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

T2 - 13th International conference on Ion beam modification of Mate

Y2 - 1 September 2002 through 6 September 2002

ER -

Preparation of high-purity Cu films by non-mass separated ion beam deposition

Abstract

Keywords

ASJC Scopus subject areas

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