Preparation of high-pressure phase boron nitride films by physical vapor deposition

P. W. Zhu; Z. He; Y. N. Zhao; D. M. Li; H. W. Liu; G. T. Zou

doi:10.1116/1.1458948

Preparation of high-pressure phase boron nitride films by physical vapor deposition

P. W. Zhu, Z. He, Y. N. Zhao, D. M. Li, H. W. Liu, G. T. Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Mixed phase boron nitride thin films, including c-BN, h-BN, w-BN, and E-BN phases, were deposited on the metallic substrates by tuned substrate rf magnetron sputtering. TEM revealed that the surface of the film is pure c-BN. The infrared peak position of c-BN at 1006.3 cm^-1 showed that the film has low stress. The growth mechanism of the c-BN layer was established based on the dependence of the IR spectra on the deposition time. With time increasing, E-BN was formed first and then w-BN appeared and finally c-BN was grown on the surface.

Original language	English
Pages (from-to)	622-624
Number of pages	3
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1458948
Publication status	Published - 2002 May

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "Mixed phase boron nitride thin films, including c-BN, h-BN, w-BN, and E-BN phases, were deposited on the metallic substrates by tuned substrate rf magnetron sputtering. TEM revealed that the surface of the film is pure c-BN. The infrared peak position of c-BN at 1006.3 cm-1 showed that the film has low stress. The growth mechanism of the c-BN layer was established based on the dependence of the IR spectra on the deposition time. With time increasing, E-BN was formed first and then w-BN appeared and finally c-BN was grown on the surface.",

author = "Zhu, {P. W.} and Z. He and Zhao, {Y. N.} and Li, {D. M.} and Liu, {H. W.} and Zou, {G. T.}",

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T1 - Preparation of high-pressure phase boron nitride films by physical vapor deposition

AU - Zhu, P. W.

AU - He, Z.

AU - Zhao, Y. N.

AU - Li, D. M.

AU - Liu, H. W.

AU - Zou, G. T.

PY - 2002/5

Y1 - 2002/5

N2 - Mixed phase boron nitride thin films, including c-BN, h-BN, w-BN, and E-BN phases, were deposited on the metallic substrates by tuned substrate rf magnetron sputtering. TEM revealed that the surface of the film is pure c-BN. The infrared peak position of c-BN at 1006.3 cm-1 showed that the film has low stress. The growth mechanism of the c-BN layer was established based on the dependence of the IR spectra on the deposition time. With time increasing, E-BN was formed first and then w-BN appeared and finally c-BN was grown on the surface.

AB - Mixed phase boron nitride thin films, including c-BN, h-BN, w-BN, and E-BN phases, were deposited on the metallic substrates by tuned substrate rf magnetron sputtering. TEM revealed that the surface of the film is pure c-BN. The infrared peak position of c-BN at 1006.3 cm-1 showed that the film has low stress. The growth mechanism of the c-BN layer was established based on the dependence of the IR spectra on the deposition time. With time increasing, E-BN was formed first and then w-BN appeared and finally c-BN was grown on the surface.

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

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Preparation of high-pressure phase boron nitride films by physical vapor deposition

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