Preparation of high-pressure phase boron nitride films by physical vapor deposition

P. W. Zhu, Z. He, Y. N. Zhao, D. M. Li, H. W. Liu, G. T. Zou

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Mixed phase boron nitride thin films, including c-BN, h-BN, w-BN, and E-BN phases, were deposited on the metallic substrates by tuned substrate rf magnetron sputtering. TEM revealed that the surface of the film is pure c-BN. The infrared peak position of c-BN at 1006.3 cm-1 showed that the film has low stress. The growth mechanism of the c-BN layer was established based on the dependence of the IR spectra on the deposition time. With time increasing, E-BN was formed first and then w-BN appeared and finally c-BN was grown on the surface.

Original languageEnglish
Pages (from-to)622-624
Number of pages3
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Issue number3
Publication statusPublished - 2002 May

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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