Preparation of hafnium oxide thin films by sol-gel method

Z. J. Wang, T. Kumagai, H. Kokawa, M. Ichiki, R. Maeda

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Hafnium oxide (HfO2) films were grown on SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO2 films could be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14∈×∈10-5 A/cm2 at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO2 films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.

Original languageEnglish
Pages (from-to)499-502
Number of pages4
JournalJournal of Electroceramics
Volume21
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2008 Dec 1

Keywords

  • Crystalline structure
  • Electrical properties
  • Hafnium oxide
  • Microstructure
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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