Preparation of GaN crystals by heating a Li3N-added Ga melt in Na vapor and their photoluminescence

Takahiro Yamada, Hisanori Yamane, Takaaki Ohta, Takenari Goto, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

GaN crystals were prepared by heating a Ga melt with 1 at% Li3N against Ga at 750°C in Na vapor under N2 pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

Original languageEnglish
Pages (from-to)13-17
Number of pages5
JournalCrystal Research and Technology
Volume42
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

Keywords

  • Crystal growth
  • GaN crystals
  • Na flux method
  • Photoluminescence

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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