Preparation of GaN crystals by heating a Li3N-added Ga melt in Na vapor and their photoluminescence

Takahiro Yamada; Hisanori Yamane; Takaaki Ohta; Takenari Goto; Takafumi Yao

doi:10.1002/crat.200610762

Preparation of GaN crystals by heating a Li₃N-added Ga melt in Na vapor and their photoluminescence

Takahiro Yamada, Hisanori Yamane, Takaaki Ohta, Takenari Goto, Takafumi Yao

Center for Exploration of New Inorganic Materials

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

GaN crystals were prepared by heating a Ga melt with 1 at% Li₃N against Ga at 750°C in Na vapor under N₂ pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N₂ were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

Original language	English
Pages (from-to)	13-17
Number of pages	5
Journal	Crystal Research and Technology
Volume	42
Issue number	1
DOIs	https://doi.org/10.1002/crat.200610762
Publication status	Published - 2007 Jan 1

Keywords

Crystal growth
GaN crystals
Na flux method
Photoluminescence

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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title = "Preparation of GaN crystals by heating a Li3N-added Ga melt in Na vapor and their photoluminescence",

abstract = "GaN crystals were prepared by heating a Ga melt with 1 at% Li3N against Ga at 750°C in Na vapor under N2 pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.",

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author = "Takahiro Yamada and Hisanori Yamane and Takaaki Ohta and Takenari Goto and Takafumi Yao",

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T1 - Preparation of GaN crystals by heating a Li3N-added Ga melt in Na vapor and their photoluminescence

AU - Yamada, Takahiro

AU - Yamane, Hisanori

AU - Ohta, Takaaki

AU - Goto, Takenari

AU - Yao, Takafumi

PY - 2007/1/1

Y1 - 2007/1/1

N2 - GaN crystals were prepared by heating a Ga melt with 1 at% Li3N against Ga at 750°C in Na vapor under N2 pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

AB - GaN crystals were prepared by heating a Ga melt with 1 at% Li3N against Ga at 750°C in Na vapor under N2 pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

KW - Crystal growth

KW - GaN crystals

KW - Na flux method

KW - Photoluminescence

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