Preparation of epitaxial pt bottom electrode and tunability of (Ba,Sr)TiO3 thin film deposited on Si substrate

Naoki Wakiya, Akinori Higuchi, Naonori Sakamoto, Nobuyasu Mizutani, Takanori Kiguchi, Hisao Suzuki, Kazuo Shinozaki

Research output: Contribution to journalConference articlepeer-review

Abstract

(001) oriented epitaxial Pt bottom electrode was prepared on Si(001) substrate using four fold buffer layer of ST/LSCO/CeO2/YSZ. On the epitaxial Pt bottom electrode, we found that both epitaxial and polycrystalline BST thin film can be prepared by the change of oxygen gas flow procedure during heating up to deposition temperature of BST. Without oxygen gas flow on the heating process of the Pt bottom electrode, BST thin film was changed into polycrystalline, on the other hand, when the Pt bottom electrode was heated in 100 mTorr of oxygen pressure, epitaxial grown BST thin film was realized. This means that the orientation of BST thin film can be controlled by the oxygen flow procedure during heating of the Pt bottom electrode. Dielectric constant and tunability of epitaxial BST thin film changed with the oxygen pressure during heating and deposition of BST thin film. This suggests that oxygen pressure during heating and deposition is the key to control the orientation and properties of BST thin film.

Original languageEnglish
Pages (from-to)132-139
Number of pages8
JournalFerroelectrics
Volume370
Issue number1 PART 4
DOIs
Publication statusPublished - 2008 Dec 1
Event11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia
Duration: 2007 Sep 32007 Sep 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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