Preparation of Epitaxial Bi4Ti3O12 Films on Sapphire Substrates by Chemical Vapor Deposition

Hiroshi Masumoto, Masahiko Namerikawa, Hisanori Yamane, Toshio Hirai

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1 Citation (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were prepared above 700°C on sapphire (1120) substrates by chemical vapor deposition using tri-phenyl-bismuth[Bi(C6H5)3] or tri-ortho-tolyl-bismuth [Bi(o-Tol)3] as Bi sources and titanium-tetra-isopropoxide [Ti(i-C3H7O)4] or di-isopropoxy-bis-(dipivaloyl metanato)-titanium [Ti(i-C3H7O)2(DPM)2] as Ti sources. The Bi4Ti3O12 films showed preferred orientation of (001) parallel to (1120) of sapphire substrate. The epitaxial relationship between sapphire <0001> and Bi4Ti3O12<100> was observed for the Bi4Ti3O12 films prepared at 850°C.

Original languageEnglish
Pages (from-to)693-696
Number of pages4
Journaljournal of the japan society of powder and powder metallurgy
Volume40
Issue number7
DOIs
Publication statusPublished - 1993

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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