Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide

Xiaohui Liu; Zhengxin Liu; Fanying Meng; Shigefusa F. Chichibu; Mutsumi Sugiyama

doi:10.1016/j.tsf.2014.02.066

Preparation of CuInS₂ thin films by sulfurization using ditertiarybutylsulfide

Xiaohui Liu, Zhengxin Liu, Fanying Meng, Shigefusa F. Chichibu, Mutsumi Sugiyama

Division of Measurements

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Sulfurization growth of single-phase chalcopyrite CuInS₂ (CIS) thin films was demonstrated using less hazardous liquid metal-organic ditertiarybutylsulfide [(t-C₄H₉)₂S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.

Original language	English
Pages (from-to)	400-404
Number of pages	5
Journal	Thin Solid Films
Volume	558
DOIs	https://doi.org/10.1016/j.tsf.2014.02.066
Publication status	Published - 2014 May 2

Keywords

Copper indium sulfide
Ditertiarybutylsulfide
Liquid sulfur source
Photoluminescence
Sulfurization
Thin films
X-Ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2014.02.066

Cite this

@article{b84e761ec7204bde802be0c87ce315f3,

title = "Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide",

abstract = "Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal-organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.",

keywords = "Copper indium sulfide, Ditertiarybutylsulfide, Liquid sulfur source, Photoluminescence, Sulfurization, Thin films, X-Ray diffraction",

author = "Xiaohui Liu and Zhengxin Liu and Fanying Meng and Chichibu, {Shigefusa F.} and Mutsumi Sugiyama",

note = "Funding Information: The authors thank Dr. K. Tang and Dr. B. Fan for their stimulating discussions. One of the authors (X. Liu) would like to thank China Scholarship Council. In addition, this work was supported in part by the Advanced Device Laboratories , Research Center for Green and Safety Sciences , and Photovoltaic Science and Technology Research Division, Research Institute for Science and Technology under the Tokyo University of Science . ",

year = "2014",

month = may,

day = "2",

doi = "10.1016/j.tsf.2014.02.066",

language = "English",

volume = "558",

pages = "400--404",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide

AU - Liu, Xiaohui

AU - Liu, Zhengxin

AU - Meng, Fanying

AU - Chichibu, Shigefusa F.

AU - Sugiyama, Mutsumi

N1 - Funding Information: The authors thank Dr. K. Tang and Dr. B. Fan for their stimulating discussions. One of the authors (X. Liu) would like to thank China Scholarship Council. In addition, this work was supported in part by the Advanced Device Laboratories , Research Center for Green and Safety Sciences , and Photovoltaic Science and Technology Research Division, Research Institute for Science and Technology under the Tokyo University of Science .

PY - 2014/5/2

Y1 - 2014/5/2

N2 - Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal-organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.

AB - Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal-organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.

KW - Copper indium sulfide

KW - Ditertiarybutylsulfide

KW - Liquid sulfur source

KW - Photoluminescence

KW - Sulfurization

KW - Thin films

KW - X-Ray diffraction

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U2 - 10.1016/j.tsf.2014.02.066

DO - 10.1016/j.tsf.2014.02.066

M3 - Article

AN - SCOPUS:84898800122

SN - 0040-6090

VL - 558

SP - 400

EP - 404

JO - Thin Solid Films

JF - Thin Solid Films

ER -