Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide

Xiaohui Liu, Zhengxin Liu, Fanying Meng, Shigefusa F. Chichibu, Mutsumi Sugiyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal-organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.

Original languageEnglish
Pages (from-to)400-404
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2014 May 2


  • Copper indium sulfide
  • Ditertiarybutylsulfide
  • Liquid sulfur source
  • Photoluminescence
  • Sulfurization
  • Thin films
  • X-Ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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