Preparation of Cu(In, AI)Se2 thin films by selenization using diethylselenide

Akihisa Umezawa; Toshihiro Yasuniwa; Atsushi Miyama; Hisayuki Nakanishi; Mutsumi Sugiyama; Shigefusa Chichibu

doi:10.1002/pssc.200881165

Preparation of Cu(In, AI)Se₂ thin films by selenization using diethylselenide

Akihisa Umezawa, Toshihiro Yasuniwa, Atsushi Miyama, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa Chichibu

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Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Selenization growth o± purely single-phase, polycrystalline CuIn_1-xAl_xSe₂ (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C₂H₅)₂Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe₂ photoabsorbing layers.

Original language	English
Pages (from-to)	1016-1018
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/pssc.200881165
Publication status	Published - 2009 Sep 30
Event	16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany Duration: 2008 Sep 15 → 2008 Sep 19

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200881165

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title = "Preparation of Cu(In, AI)Se2 thin films by selenization using diethylselenide",

abstract = "Selenization growth o± purely single-phase, polycrystalline CuIn1-xAlxSe2 (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C2H5)2Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe2 photoabsorbing layers.",

author = "Akihisa Umezawa and Toshihiro Yasuniwa and Atsushi Miyama and Hisayuki Nakanishi and Mutsumi Sugiyama and Shigefusa Chichibu",

year = "2009",

month = sep,

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doi = "10.1002/pssc.200881165",

language = "English",

volume = "6",

pages = "1016--1018",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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number = "5",

note = "16th International Conference on Ternary and Multinary Compounds, ICTMC16 ; Conference date: 15-09-2008 Through 19-09-2008",

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TY - JOUR

T1 - Preparation of Cu(In, AI)Se2 thin films by selenization using diethylselenide

AU - Umezawa, Akihisa

AU - Yasuniwa, Toshihiro

AU - Miyama, Atsushi

AU - Nakanishi, Hisayuki

AU - Sugiyama, Mutsumi

AU - Chichibu, Shigefusa

PY - 2009/9/30

Y1 - 2009/9/30

N2 - Selenization growth o± purely single-phase, polycrystalline CuIn1-xAlxSe2 (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C2H5)2Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe2 photoabsorbing layers.

AB - Selenization growth o± purely single-phase, polycrystalline CuIn1-xAlxSe2 (0 ≤ x ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C2H5)2Se: DESe]. Without additional thermal annealing, approximately 2.0-μm-thick alloy films exhibiting X-ray diffraction peaks originating exclusively from the chalcopynte structure were obtained. Their low temperature photolumi-nescence spectra were dominated by characteristic donor-acceptor pair emissions usually seen in the state-of-the-art CuInAlSe2 photoabsorbing layers.

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DO - 10.1002/pssc.200881165

M3 - Conference article

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

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T2 - 16th International Conference on Ternary and Multinary Compounds, ICTMC16

Y2 - 15 September 2008 through 19 September 2008

ER -

Preparation of Cu(In, AI)Se₂ thin films by selenization using diethylselenide

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