Preparation of CoFe2O4 Spin Valves and Improvement of Their Magnetoresistance Property by Postannealing

Hiroshi Naganuma, Soichiro Okamura, Hiroshi Sakakima, Tadashi Shiosaki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have fabricated spin valves which had the simple structure of Si/SiO2/CoFe2O4 (40 nm)/Co (2 nm)/Cu (2 nm)/Co (4 nm) by rf-magnetron sputtering at room temperature. A hard magnetic and insulating Co-ferrite film was used as a pinning layer. As-deposited films showed a high sheet resistance of 36.3 Ω/square and a magnetoresistance (MR) ratio of 4.5%. The MR property of the spin valves was significantly improved by postannealing in a vacuum. An MR ratio of 10.5% was attained by annealing at 300°C for 4 h. The variation in sheet resistance was approximately 3.9 Ω/square. This remarkable increase in MR ratio could be attributed to the construction of clear Co/Cu/Co/CoFe2O4 interfaces and the improvement of the magnetic property of the Co-ferrite layer by postannealing.

Original languageEnglish
Pages (from-to)6865-6868
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - 2003 Nov
Externally publishedYes


  • Annealing
  • CoFeO
  • Hard magnetics
  • Magneto-resistance
  • Spin valve

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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