Preparation of Ca-Si-O films by chemical vapor deposition

Shekhar Nath, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Ca-Si-O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca-Si-O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4 and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub=923 to 1023K and RSi/Ca=49, Ca2SiO4 film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240μmh-1 at Tsub=1323K and RSi/Ca=29.

Original languageEnglish
Pages (from-to)2618-2623
Number of pages6
JournalSurface and Coatings Technology
Volume205
Issue number7
DOIs
Publication statusPublished - 2010 Dec 25

Keywords

  • CVD
  • Calcium silicate
  • Crystal phase
  • Deposition rate
  • Microstructure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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