Preparation of Ca-Si-O films by chemical vapor deposition

Shekhar Nath; Rong Tu; Takashi Goto

doi:10.1016/j.surfcoat.2010.10.024

Preparation of Ca-Si-O films by chemical vapor deposition

Shekhar Nath, Rong Tu, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Ca-Si-O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)₂) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (R_Si/Ca) and the substrate temperature (T_sub) on the crystal phase, microstructure and deposition rate of Ca-Si-O films were investigated. Three main phases, i.e., CaSiO₃, Ca₂SiO₄ and Ca₃SiO₅, were obtained along with the CaO and amorphous phases. At T_sub=923 to 1023K and R_Si/Ca=49, Ca₂SiO₄ film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing R_Si/Ca. The maximum deposition rate was 240μmh^-1 at T_sub=1323K and R_Si/Ca=29.

Original language	English
Pages (from-to)	2618-2623
Number of pages	6
Journal	Surface and Coatings Technology
Volume	205
Issue number	7
DOIs	https://doi.org/10.1016/j.surfcoat.2010.10.024
Publication status	Published - 2010 Dec 25

Keywords

CVD
Calcium silicate
Crystal phase
Deposition rate
Microstructure

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2010.10.024

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title = "Preparation of Ca-Si-O films by chemical vapor deposition",

abstract = "Ca-Si-O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca-Si-O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4 and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub=923 to 1023K and RSi/Ca=49, Ca2SiO4 film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240μmh-1 at Tsub=1323K and RSi/Ca=29.",

keywords = "CVD, Calcium silicate, Crystal phase, Deposition rate, Microstructure",

author = "Shekhar Nath and Rong Tu and Takashi Goto",

note = "Funding Information: Author SN thanks to JSPS for the fellowship. ",

year = "2010",

month = dec,

day = "25",

doi = "10.1016/j.surfcoat.2010.10.024",

language = "English",

volume = "205",

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journal = "Surface and Coatings Technology",

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TY - JOUR

T1 - Preparation of Ca-Si-O films by chemical vapor deposition

AU - Nath, Shekhar

AU - Tu, Rong

AU - Goto, Takashi

N1 - Funding Information: Author SN thanks to JSPS for the fellowship.

PY - 2010/12/25

Y1 - 2010/12/25

N2 - Ca-Si-O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca-Si-O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4 and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub=923 to 1023K and RSi/Ca=49, Ca2SiO4 film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240μmh-1 at Tsub=1323K and RSi/Ca=29.

AB - Ca-Si-O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca-Si-O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4 and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub=923 to 1023K and RSi/Ca=49, Ca2SiO4 film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240μmh-1 at Tsub=1323K and RSi/Ca=29.

KW - CVD

KW - Calcium silicate

KW - Crystal phase

KW - Deposition rate

KW - Microstructure

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U2 - 10.1016/j.surfcoat.2010.10.024

DO - 10.1016/j.surfcoat.2010.10.024

M3 - Article

AN - SCOPUS:78649754141

VL - 205

SP - 2618

EP - 2623

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 7

ER -

Preparation of Ca-Si-O films by chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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