Preparation of bismuth titanate films by chemical vapor deposition

Hiroshi Masumoto; Masahiko Namerikawa; Toshio Hirai

Preparation of bismuth titanate films by chemical vapor deposition

Hiroshi Masumoto, Masahiko Namerikawa, Toshio Hirai

Advanced Interdisciplinary Research Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Bismuth titanate (Bi₄Ti₃O₁₂) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC₃H₂)₂(DPM)₂ ) and tri-o-tolyl bismuth (Bi(o-Tol)₃) as precursors. Bi₄ Ti₃O₁₂ films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi₄Ti₃O₁₂(001), sapphire(1120)//Bi₄Ti₃O₁₂(100) and sapphire (0001)// Bi₄Ti₃O₁₂(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm² and 44kV/cm, respectively.

Original language	English
Title of host publication	First International Conference on Processing Materials for Properties
Publisher	Publ by Minerals, Metals & Materials Soc (TMS)
Pages	1113-1116
Number of pages	4
ISBN (Print)	0873392566
Publication status	Published - 1993 Dec 1
Event	Proceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA Duration: 1993 Nov 7 → 1993 Nov 10

Publication series

Name	First International Conference on Processing Materials for Properties

Other

Other	Proceedings of the 1st International Conference on Processing Materials for Properties
City	Honolulu, HI, USA
Period	93/11/7 → 93/11/10

ASJC Scopus subject areas

Engineering(all)

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Masumoto, H., Namerikawa, M., & Hirai, T. (1993). Preparation of bismuth titanate films by chemical vapor deposition. In First International Conference on Processing Materials for Properties (pp. 1113-1116). (First International Conference on Processing Materials for Properties). Publ by Minerals, Metals & Materials Soc (TMS).

Preparation of bismuth titanate films by chemical vapor deposition. / Masumoto, Hiroshi; Namerikawa, Masahiko; Hirai, Toshio.

First International Conference on Processing Materials for Properties. Publ by Minerals, Metals & Materials Soc (TMS), 1993. p. 1113-1116 (First International Conference on Processing Materials for Properties).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Masumoto, H, Namerikawa, M & Hirai, T 1993, Preparation of bismuth titanate films by chemical vapor deposition. in First International Conference on Processing Materials for Properties. First International Conference on Processing Materials for Properties, Publ by Minerals, Metals & Materials Soc (TMS), pp. 1113-1116, Proceedings of the 1st International Conference on Processing Materials for Properties, Honolulu, HI, USA, 93/11/7.

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title = "Preparation of bismuth titanate films by chemical vapor deposition",

abstract = "Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.",

author = "Hiroshi Masumoto and Masahiko Namerikawa and Toshio Hirai",

year = "1993",

month = dec,

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language = "English",

isbn = "0873392566",

series = "First International Conference on Processing Materials for Properties",

publisher = "Publ by Minerals, Metals & Materials Soc (TMS)",

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note = "Proceedings of the 1st International Conference on Processing Materials for Properties ; Conference date: 07-11-1993 Through 10-11-1993",

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T1 - Preparation of bismuth titanate films by chemical vapor deposition

AU - Masumoto, Hiroshi

AU - Namerikawa, Masahiko

AU - Hirai, Toshio

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.

AB - Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.

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SN - 0873392566

T3 - First International Conference on Processing Materials for Properties

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BT - First International Conference on Processing Materials for Properties

PB - Publ by Minerals, Metals & Materials Soc (TMS)

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