TY - GEN
T1 - Preparation of bismuth titanate films by chemical vapor deposition
AU - Masumoto, Hiroshi
AU - Namerikawa, Masahiko
AU - Hirai, Toshio
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.
AB - Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.
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M3 - Conference contribution
AN - SCOPUS:0027850269
SN - 0873392566
T3 - First International Conference on Processing Materials for Properties
SP - 1113
EP - 1116
BT - First International Conference on Processing Materials for Properties
PB - Publ by Minerals, Metals & Materials Soc (TMS)
T2 - Proceedings of the 1st International Conference on Processing Materials for Properties
Y2 - 7 November 1993 through 10 November 1993
ER -