Preparation of bismuth titanate films by chemical vapor deposition

Hiroshi Masumoto, Masahiko Namerikawa, Toshio Hirai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were prepared on sapphire substrates (A(1120), R(1102) and C(0001) planes) by chemical vapor deposition using di-isopropoxy-bis (di-pivaloyl-methanato) titanium (Ti(i-OC3H2)2(DPM)2 ) and tri-o-tolyl bismuth (Bi(o-Tol)3) as precursors. Bi4 Ti3O12 films were obtained at a deposition-temperature of 853K. Deposition rate was 0.3 μm/h/. Preferred orientations were observed: sapphire (1120)//Bi4Ti3O12(001), sapphire(1120)//Bi4Ti3O12(100) and sapphire (0001)// Bi4Ti3O12(104). The ferroelectric hysteresis for CVD-BIT films was measured at 50 Hz. The remanent polarization and coercive field were 227 μC/cm2 and 44kV/cm, respectively.

Original languageEnglish
Title of host publicationFirst International Conference on Processing Materials for Properties
PublisherPubl by Minerals, Metals & Materials Soc (TMS)
Pages1113-1116
Number of pages4
ISBN (Print)0873392566
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA
Duration: 1993 Nov 71993 Nov 10

Publication series

NameFirst International Conference on Processing Materials for Properties

Other

OtherProceedings of the 1st International Conference on Processing Materials for Properties
CityHonolulu, HI, USA
Period93/11/793/11/10

ASJC Scopus subject areas

  • Engineering(all)

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