Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition

Tetsuro Tohma, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Barium titanate zirconate (Ba(Ti1-xZrx)O3) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x ≤ 0.15, the Ba(Ti1-xZrx)O 3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti 1-xZrx)O3 films changed with x from 35 to 689 and showed a maximum at x = 0.15. The remanent polarization (2Pr,) and the coercive field (2EC) of Ba(Ti0.85Zr 0.15)O3 film were 3μC·cm-2 and 14kV·cm-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZx)O3 film increased from 10k to 1 MV·cm-1 with increasing x.

Original languageEnglish
Pages (from-to)6643-6646
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number11 B
DOIs
Publication statusPublished - 2002 Nov 1

Keywords

  • Ba(TiZr)O
  • Barium titanate
  • Ferroelectric properties
  • Film
  • Metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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