Preparation of Ba2Nanb5015 film by Rf magnetron sputtering method

Yoichiro Masuda, Hiroshi Masumoto, Akira Baba, Takashi Goto, Toshio Hirai

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23 Citations (Scopus)

Abstract

A film with tungsten-bronze structure was formed on a Pt/Al2O3 substrate by a RF msagnetron sputtering method. The deposition ratio of the films (Ba:Na:Nb) depended on the sputtering gas pressure. When the deposition rates were 10 nm/min at 10-1 Pa and 5 nm/min at 8 Pa, the dielectric constant and the dielectric loss factor were 141 and 0.02 at room temperature, respectively, and the remanent polarization Pr and the coercive field Ec were 32 C/cm2 and 576 V/mm, respectively.

Original languageEnglish
Pages (from-to)4043-4047
Number of pages5
JournalJapanese journal of applied physics
Volume32
Issue number9
DOIs
Publication statusPublished - 1993 Sep

Keywords

  • BaNaNbO
  • Ferroelectric
  • Film thickness
  • Orthorhombic-tetragonal phase transition
  • Pt electrode
  • RF magnetron sputtering
  • Tungsten-bronze structure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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