Preparation of BaRuO3 and BaIrO3 films by laser ablation

H. Masumoto; A. Ito; Y. Kaneko; T. Goto

doi:10.4028/0-87849-410-3.730

Preparation of BaRuO₃ and BaIrO₃ films by laser ablation

H. Masumoto, A. Ito, Y. Kaneko, T. Goto

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

BaRuO₃(BRO) and BaIrO₃(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (P_O2) = 13 Pa and substrate temperature (T_sub) < 573 K were amorphous. At T_sub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at T_sub = 773 K and P_O2= 13 Pa exhibited the resistivity of 5×10^-6 ωm and showed metallic conduction. BIO thin films deposited at P_O2= 40 Pa and T_sub < 623 K were amorphous. T_sub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at P_O2= 40 Pa decreased from 1.4×10^-2 to 4×10^-4 ωm with decreasing T_sUb from 1073 to 573 K.

Original language	English
Pages (from-to)	730-734
Number of pages	5
Journal	Key Engineering Materials
Volume	336-338 I
DOIs	https://doi.org/10.4028/0-87849-410-3.730
Publication status	Published - 2007 Jan 1

Keywords

BaIrO
BaRuO
Laser ablation
Resistivity
Thin films

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-410-3.730

Cite this

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title = "Preparation of BaRuO3 and BaIrO3 films by laser ablation",

abstract = "BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5×10-6 ωm and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4×10-2 to 4×10-4 ωm with decreasing TsUb from 1073 to 573 K.",

keywords = "BaIrO, BaRuO, Laser ablation, Resistivity, Thin films",

author = "H. Masumoto and A. Ito and Y. Kaneko and T. Goto",

year = "2007",

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doi = "10.4028/0-87849-410-3.730",

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T1 - Preparation of BaRuO3 and BaIrO3 films by laser ablation

AU - Masumoto, H.

AU - Ito, A.

AU - Kaneko, Y.

AU - Goto, T.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5×10-6 ωm and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4×10-2 to 4×10-4 ωm with decreasing TsUb from 1073 to 573 K.

AB - BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5×10-6 ωm and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4×10-2 to 4×10-4 ωm with decreasing TsUb from 1073 to 573 K.

KW - BaIrO

KW - BaRuO

KW - Laser ablation

KW - Resistivity

KW - Thin films

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