Preparation of B-C-Si system composites by arc melting and their thermoelectric properties

Takashi Goto, Eiji Ito, Masakazu Mukaida, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

B4C-SiC quasi-binary and B-C-Si ternary composites were prepared by arc melting in argon atmosphere using B4C, SiC, Si, B and C powders. Uniform lamella texture indicating eutectic reaction was observed at SiC molar content of 45 to 50mol% in the quasi-binary system. Free C and free Si co-precipitated at the C-rich and Si-rich side of the quasi-binary compositions, respectively. The thermoelectric figure of merit values (Z) of the B4C-SiC composites were generally greater than those of the C-rich and Si-rich composites. The SiC-B4C composites near the eutectic composition (40mol%SiC) showed the greatest Seebeck coefficient, electrical conductivity and Z values. The greatest ZT value of the B4C-SiC composites (40mol%SiC) at T=1100K was about 0.2.

Original languageEnglish
Pages (from-to)311-315
Number of pages5
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume43
Issue number3
DOIs
Publication statusPublished - 1996 Mar

Keywords

  • Arc melting
  • B-C-Si system
  • Eutectic reaction
  • SiC-BC quasi-binary
  • Thermoelectric properties

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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