Preparation of amorphous Si3N4-C plate by chemical vapour deposition

Toshio Hirai; Takashi Goto

doi:10.1007/BF00552054

Preparation of amorphous Si₃N₄-C plate by chemical vapour deposition

Toshio Hirai, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Chemical vapour deposition of a Si-N-C system has been studied by using SiCl₄, NH₃, H₂ and C₃H₈ as source gases at deposition temperatures (T_dep) of 1100 to 1600° C, and total gas pressures (P_tot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C₃H₈)] was varied from 0 to 200 cm³ min^-1. Homogeneous plate-like amorphous deposits were successfully prepared at T_dep=1100 to 1300° C, P_tot=30 to 70 torr and FR(C₃H₈)=25 to 100 cm³ min^-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C₃H₈). The surfaces of the deposits had a pebble-like structure.

Original language	English
Pages (from-to)	17-23
Number of pages	7
Journal	Journal of Materials Science
Volume	16
Issue number	1
DOIs	https://doi.org/10.1007/BF00552054
Publication status	Published - 1981 Jan 1

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Preparation of amorphous Si3N4-C plate by chemical vapour deposition",

abstract = "Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.",

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N2 - Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.

AB - Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.

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Preparation of amorphous Si₃N₄-C plate by chemical vapour deposition

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