Preparation of amorphous Si3N4-C plate by chemical vapour deposition

Toshio Hirai, Takashi Goto

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.

Original languageEnglish
Pages (from-to)17-23
Number of pages7
JournalJournal of Materials Science
Issue number1
Publication statusPublished - 1981 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Preparation of amorphous Si3N4-C plate by chemical vapour deposition'. Together they form a unique fingerprint.

Cite this