Abstract
Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.
Original language | English |
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Pages (from-to) | 17-23 |
Number of pages | 7 |
Journal | Journal of Materials Science |
Volume | 16 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1981 Jan 1 |
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering