Preparation of amorphous Si3N4-C plate by chemical vapour deposition

Toshio Hirai; Takashi Goto

doi:10.1007/BF00552054

Preparation of amorphous Si₃N₄-C plate by chemical vapour deposition

Toshio Hirai, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Chemical vapour deposition of a Si-N-C system has been studied by using SiCl₄, NH₃, H₂ and C₃H₈ as source gases at deposition temperatures (T_dep) of 1100 to 1600° C, and total gas pressures (P_tot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C₃H₈)] was varied from 0 to 200 cm³ min^-1. Homogeneous plate-like amorphous deposits were successfully prepared at T_dep=1100 to 1300° C, P_tot=30 to 70 torr and FR(C₃H₈)=25 to 100 cm³ min^-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C₃H₈). The surfaces of the deposits had a pebble-like structure.

Original language	English
Pages (from-to)	17-23
Number of pages	7
Journal	Journal of Materials Science
Volume	16
Issue number	1
DOIs	https://doi.org/10.1007/BF00552054
Publication status	Published - 1981 Jan 1

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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@article{13c8f54c5a0b4cea8cda2b45a09ef041,

title = "Preparation of amorphous Si3N4-C plate by chemical vapour deposition",

abstract = "Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.",

author = "Toshio Hirai and Takashi Goto",

year = "1981",

month = jan,

day = "1",

doi = "10.1007/BF00552054",

language = "English",

volume = "16",

pages = "17--23",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer Netherlands",

number = "1",

}

TY - JOUR

T1 - Preparation of amorphous Si3N4-C plate by chemical vapour deposition

AU - Hirai, Toshio

AU - Goto, Takashi

PY - 1981/1/1

Y1 - 1981/1/1

N2 - Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.

AB - Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min-1. Homogeneous plate-like amorphous deposits were successfully prepared at Tdep=1100 to 1300° C, Ptot=30 to 70 torr and FR(C3H8)=25 to 100 cm3 min-1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasing FR(C3H8). The surfaces of the deposits had a pebble-like structure.

UR - http://www.scopus.com/inward/record.url?scp=0002176283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0002176283&partnerID=8YFLogxK

U2 - 10.1007/BF00552054

DO - 10.1007/BF00552054

M3 - Article

AN - SCOPUS:0002176283

VL - 16

SP - 17

EP - 23

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 1

ER -