Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.
|Title of host publication||Materials Science Research|
|Editors||Robert Foster Davis, Hayne III Palmour, Richard L. Porter|
|Number of pages||12|
|Publication status||Published - 1984 Dec 1|
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