PREPARATION OF AMORPHOUS Si//3N//4-BN COMPOSITES BY CHEMICAL VAPOR DEPOSITION.

Toshio Hirai; Takashi Goto; Tadashi Sakai

PREPARATION OF AMORPHOUS Si//3N//4-BN COMPOSITES BY CHEMICAL VAPOR DEPOSITION.

Toshio Hirai, Takashi Goto, Tadashi Sakai

Materials Processing and Characterization Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.

Original language	English
Title of host publication	Materials Science Research
Editors	Robert Foster Davis, Hayne III Palmour, Richard L. Porter
Publisher	Plenum Press
Pages	347-358
Number of pages	12
Volume	17
ISBN (Print)	0306416778
Publication status	Published - 1984 Dec 1

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "PREPARATION OF AMORPHOUS Si//3N//4-BN COMPOSITES BY CHEMICAL VAPOR DEPOSITION.",

abstract = "Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.",

author = "Toshio Hirai and Takashi Goto and Tadashi Sakai",

year = "1984",

month = dec,

day = "1",

language = "English",

isbn = "0306416778",

volume = "17",

pages = "347--358",

editor = "Davis, {Robert Foster} and Palmour, {Hayne III} and Porter, {Richard L.}",

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publisher = "Plenum Press",

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TY - GEN

T1 - PREPARATION OF AMORPHOUS Si//3N//4-BN COMPOSITES BY CHEMICAL VAPOR DEPOSITION.

AU - Hirai, Toshio

AU - Goto, Takashi

AU - Sakai, Tadashi

PY - 1984/12/1

Y1 - 1984/12/1

N2 - Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.

AB - Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.

UR - http://www.scopus.com/inward/record.url?scp=0021594345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021594345&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021594345

SN - 0306416778

VL - 17

SP - 347

EP - 358

BT - Materials Science Research

A2 - Davis, Robert Foster

A2 - Palmour, Hayne III

A2 - Porter, Richard L.

PB - Plenum Press

ER -

PREPARATION OF AMORPHOUS Si//3N//4-BN COMPOSITES BY CHEMICAL VAPOR DEPOSITION.

Abstract

ASJC Scopus subject areas

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