Abstract
Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.
Original language | English |
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Title of host publication | Materials Science Research |
Editors | Robert Foster Davis, Hayne III Palmour, Richard L. Porter |
Publisher | Plenum Press |
Pages | 347-358 |
Number of pages | 12 |
Volume | 17 |
ISBN (Print) | 0306416778 |
Publication status | Published - 1984 Dec 1 |
ASJC Scopus subject areas
- Engineering(all)