PREPARATION OF AMORPHOUS Si//3N//4-BN COMPOSITES BY CHEMICAL VAPOR DEPOSITION.

Toshio Hirai, Takashi Goto, Tadashi Sakai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Chemical vapor deposition of Si-N-B has been studied using SiCl//4, NH//3, H//2 and B//2H//6 as source gases at deposition temperature of 1100 degree to 1300 degree C and total gas pressures of 30 to 70 torr. The chemical composition and density of the deposits were measured. Structure was investigated by X-ray diffraction and IR absorption techniques. The deposits are composed of amorphous Si//3N//4 and turbostratic BN.

Original languageEnglish
Title of host publicationMaterials Science Research
EditorsRobert Foster Davis, Hayne III Palmour, Richard L. Porter
PublisherPlenum Press
Pages347-358
Number of pages12
Volume17
ISBN (Print)0306416778
Publication statusPublished - 1984 Dec 1

ASJC Scopus subject areas

  • Engineering(all)

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