Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition

Takashi Goto, Wei Zhang, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3-N2O-N2-Ar-H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.

Original languageEnglish
Pages (from-to)3668-3674
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number6 A
DOIs
Publication statusPublished - 1999 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition'. Together they form a unique fingerprint.

Cite this