Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition

Takashi Goto; Wei Zhang; Toshio Hirai

doi:10.1143/jjap.38.3668

Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition

Takashi Goto, Wei Zhang, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr₃-N₂O-N₂-Ar-H₂ gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N₂O/(N₂O+N₂) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (E_g/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al₂O₃ and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.

Original language	English
Pages (from-to)	3668-3674
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.38.3668
Publication status	Published - 1999 Jun
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{0ebe092c41c34618971265d846afa4b8,

title = "Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition",

abstract = "Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3-N2O-N2-Ar-H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.",

author = "Takashi Goto and Wei Zhang and Toshio Hirai",

year = "1999",

month = jun,

doi = "10.1143/jjap.38.3668",

language = "English",

volume = "38",

pages = "3668--3674",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

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TY - JOUR

T1 - Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition

AU - Goto, Takashi

AU - Zhang, Wei

AU - Hirai, Toshio

PY - 1999/6

Y1 - 1999/6

N2 - Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3-N2O-N2-Ar-H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.

AB - Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3-N2O-N2-Ar-H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -

Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition

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