Preparation of actinide compounds in the Oharai facility

In 1990, the Oharai facility of Tohoku University began operations of its unit for research on the materials science of actinide elements. By using high vacuum zone melting and solid state electrolysis, uranium metal was refined up to a purity of 99.99 wt.%. The growth of U₂PtSi₃ and UGe₂ single crystals was achieved by the Czochralski pulling method, using a tri-arc furnace. The Bridgman method using capsulation in a tungsten metal cylinder was employed to grow UTe and USb single crystals. Thin plates of UCu₅ and UAl₂ amorphous alloys were prepared by sputter deposition. These compounds were characterized by measuring the X-ray diffraction, electrical resistivity, magnetic susceptibility and low temperature specific heat.