Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)4

Nobuaki Sato, Kazuo Nakajima, Noritaka Usami, Hideyuki Takahashi, Atsushi Muramatsu, Eiichiro Matsubara

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Growth of a TiO2 film on a Si wafer by CVD method was studied for a new design of chemically stable device which is useful in the visible region and increases the efficiency of the photocatalytic decomposition process of water. This design is made up of a monolithic structure of a TiO2 thin film and a Si solar cell. The TiO2 film was deposited on a Si substrate by the vapor phase reaction of Ti(OPri)4 with water at temperatures from room temperature to 473 K. At room temperature, a rough TiO2 film with a nano-sized cone shape deposit was observed by AFM. The smooth TiO2 film of ∼ 10 nm thickness was obtained by the reaction of 80 Pa Ti(OPri)4 and 493 Pa water vapors at 473 K for 10.8 ks. The surface and the thickness of the film became rougher and thicker, respectively, with increasing pressure of Ti(OPri)4.

Original languageEnglish
Pages (from-to)1533-1536
Number of pages4
JournalMaterials Transactions
Volume43
Issue number7
DOIs
Publication statusPublished - 2002 Jul

Keywords

  • Chemical vapor deposition
  • Photo-decomposition of water
  • Photocatalysis
  • Silicon solar cell
  • TiO thin film
  • TiO/Si heterostructure device
  • Titanium tetra-i-propoxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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