Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's

Seiichi Takahashi, Tokio Nakada, Kiichi Kamimura, Hideaki Zama, Takeo Hattori, Akio Kunioka

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    4 Citations (Scopus)

    Abstract

    Thin silicon nitride (Six) layers have been successfully prepared by photochemical vapor deposition (photo-CVD) technique. Ellipsometric and X-ray photoelectron spectroscopic studies prove that the refractive index and concentration of nitrogen in the layer are strongly dependent on the substrate temperature. The interface state density at the SiNx/InP interface is estimated to be 8×1011 cm-2 eV-1 from the capacitance-voltage characteristics of InP MIS diodes. Using SiNx layer as a gate insulator, InP MISFET's were fabricated on semi-insulating InP substrates.

    Original languageEnglish
    Pages (from-to)L1606-L1609
    JournalJapanese journal of applied physics
    Volume26
    Issue number10 A
    DOIs
    Publication statusPublished - 1987 Oct

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Takahashi, S., Nakada, T., Kamimura, K., Zama, H., Hattori, T., & Kunioka, A. (1987). Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's. Japanese journal of applied physics, 26(10 A), L1606-L1609. https://doi.org/10.1143/JJAP.26.L1606