TY - JOUR
T1 - Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's
AU - Takahashi, Seiichi
AU - Nakada, Tokio
AU - Kamimura, Kiichi
AU - Zama, Hideaki
AU - Hattori, Takeo
AU - Kunioka, Akio
PY - 1987/10
Y1 - 1987/10
N2 - Thin silicon nitride (Six) layers have been successfully prepared by photochemical vapor deposition (photo-CVD) technique. Ellipsometric and X-ray photoelectron spectroscopic studies prove that the refractive index and concentration of nitrogen in the layer are strongly dependent on the substrate temperature. The interface state density at the SiNx/InP interface is estimated to be 8×1011 cm-2 eV-1 from the capacitance-voltage characteristics of InP MIS diodes. Using SiNx layer as a gate insulator, InP MISFET's were fabricated on semi-insulating InP substrates.
AB - Thin silicon nitride (Six) layers have been successfully prepared by photochemical vapor deposition (photo-CVD) technique. Ellipsometric and X-ray photoelectron spectroscopic studies prove that the refractive index and concentration of nitrogen in the layer are strongly dependent on the substrate temperature. The interface state density at the SiNx/InP interface is estimated to be 8×1011 cm-2 eV-1 from the capacitance-voltage characteristics of InP MIS diodes. Using SiNx layer as a gate insulator, InP MISFET's were fabricated on semi-insulating InP substrates.
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U2 - 10.1143/JJAP.26.L1606
DO - 10.1143/JJAP.26.L1606
M3 - Article
AN - SCOPUS:0023437726
VL - 26
SP - L1606-L1609
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 A
ER -