Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's

Seiichi Takahashi; Tokio Nakada; Kiichi Kamimura; Hideaki Zama; Takeo Hattori; Akio Kunioka

doi:10.1143/JJAP.26.L1606

Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's

Seiichi Takahashi, Tokio Nakada, Kiichi Kamimura, Hideaki Zama, Takeo Hattori, Akio Kunioka

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Thin silicon nitride (Si_x) layers have been successfully prepared by photochemical vapor deposition (photo-CVD) technique. Ellipsometric and X-ray photoelectron spectroscopic studies prove that the refractive index and concentration of nitrogen in the layer are strongly dependent on the substrate temperature. The interface state density at the SiN_x/InP interface is estimated to be 8×10¹¹ cm^-2 eV^-1 from the capacitance-voltage characteristics of InP MIS diodes. Using SiN_x layer as a gate insulator, InP MISFET's were fabricated on semi-insulating InP substrates.

Original language	English
Pages (from-to)	L1606-L1609
Journal	Japanese journal of applied physics
Volume	26
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.26.L1606
Publication status	Published - 1987 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Takahashi, S., Nakada, T., Kamimura, K., Zama, H., Hattori, T., & Kunioka, A. (1987). Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's. Japanese journal of applied physics, 26(10 A), L1606-L1609. https://doi.org/10.1143/JJAP.26.L1606

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AU - Hattori, Takeo

AU - Kunioka, Akio

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