Preparation of a thin silicon nitride layer by photo-CVD and its application to inp misfet's

Seiichi Takahashi, Tokio Nakada, Kiichi Kamimura, Hideaki Zama, Takeo Hattori, Akio Kunioka

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Thin silicon nitride (Six) layers have been successfully prepared by photochemical vapor deposition (photo-CVD) technique. Ellipsometric and X-ray photoelectron spectroscopic studies prove that the refractive index and concentration of nitrogen in the layer are strongly dependent on the substrate temperature. The interface state density at the SiNx/InP interface is estimated to be 8×1011 cm-2 eV-1 from the capacitance-voltage characteristics of InP MIS diodes. Using SiNx layer as a gate insulator, InP MISFET's were fabricated on semi-insulating InP substrates.

Original languageEnglish
Pages (from-to)L1606-L1609
JournalJapanese journal of applied physics
Volume26
Issue number10 A
DOIs
Publication statusPublished - 1987 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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