Abstract
(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the φ-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 μm h-1.
| Original language | English |
|---|---|
| Pages (from-to) | 15919-15923 |
| Number of pages | 5 |
| Journal | Ceramics International |
| Volume | 40 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2014 Dec 1 |
Keywords
- CeO film
- High depostion rate
- Laser chemical vapor deposition
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry
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Cite this
Zhao, P., Huang, Z., Mao, Y., Wang, Y., & Takashi, G. (2014). Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor. Ceramics International, 40(10), 15919-15923. https://doi.org/10.1016/j.ceramint.2014.07.120