Abstract
(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the φ-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 μm h-1.
Original language | English |
---|---|
Pages (from-to) | 15919-15923 |
Number of pages | 5 |
Journal | Ceramics International |
Volume | 40 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2014 Dec 1 |
Keywords
- CeO film
- High depostion rate
- Laser chemical vapor deposition
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry