Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor

Pei Zhao; Zhiliang Huang; Yangwu Mao; Ying Wang; Goto Takashi

doi:10.1016/j.ceramint.2014.07.120

Preparation of (100)-oriented CeO₂ film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor

Pei Zhao, Zhiliang Huang, Yangwu Mao, Ying Wang, Goto Takashi

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

(100)-oriented CeO₂ films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO₂ film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the φ-scan on the (220) reflection, respectively. The (100)-oriented CeO₂ films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO₂ films were 16-24 μm h^-1.

Original language	English
Pages (from-to)	15919-15923
Number of pages	5
Journal	Ceramics International
Volume	40
Issue number	10
DOIs	https://doi.org/10.1016/j.ceramint.2014.07.120
Publication status	Published - 2014 Dec 1

Keywords

CeO film
High depostion rate
Laser chemical vapor deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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title = "Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor",

abstract = "(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the φ-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 μm h-1.",

keywords = "CeO film, High depostion rate, Laser chemical vapor deposition",

author = "Pei Zhao and Zhiliang Huang and Yangwu Mao and Ying Wang and Goto Takashi",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant nos. 51302199 and 51374155 ). ",

year = "2014",

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doi = "10.1016/j.ceramint.2014.07.120",

language = "English",

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T1 - Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor

AU - Zhao, Pei

AU - Huang, Zhiliang

AU - Mao, Yangwu

AU - Wang, Ying

AU - Takashi, Goto

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant nos. 51302199 and 51374155 ).

PY - 2014/12/1

Y1 - 2014/12/1

N2 - (100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the φ-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 μm h-1.

AB - (100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the φ-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16-24 μm h-1.

KW - CeO film

KW - High depostion rate

KW - Laser chemical vapor deposition

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