Preparation of (020)-oriented BaTi 2O 5 thick films and their dielectric responses

Akihiko Ito, Dongyun Guo, Rong Tu, Takashi Goto

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13 Citations (Scopus)


Barium dititanate (BaTi 2O 5) thick films were prepared on a Pt-coated Si substrate by laser chemical vapor deposition, and ac electric responses of (020)-oriented BaTi 2O 5 films were investigated using several equivalent electric circuit models. BaTi 2O 5 films in a single phase were obtained at a Ti/Ba molar ratio (m Ti/Ba) of 1.72-1.74 and deposition temperature (T dep) of 908-1065K as well as m Ti/Ba=1.95 and T dep=914-953K. (020)-oriented BaTi 2O 5 films were obtained at m Ti/Ba=1.72-1.74 and T dep=989-1051K. BaTi 2O 5 films had columnar grains, and the deposition rate reached 93μmh -1. The maximum relative permittivity of the (020)-oriented BaTi 2O 5 film prepared at T dep=989K was 653 at 759K. The model of an equivalent circuit involving a parallel combination of a resistor, a capacitor, and a constant phase element well fitted the frequency dependence of the interrelated ac electrical responses of the impedance, electric modulus, and admittance of (020)-oriented BaTi 2O 5 films.

Original languageEnglish
Pages (from-to)2459-2467
Number of pages9
JournalJournal of the European Ceramic Society
Issue number10
Publication statusPublished - 2012 Aug


  • BaTi O
  • BaTiO and titanates
  • Dielectric properties
  • Films
  • Impedance

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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