TY - JOUR
T1 - Preparation of (020)-oriented BaTi 2O 5 thick films and their dielectric responses
AU - Ito, Akihiko
AU - Guo, Dongyun
AU - Tu, Rong
AU - Goto, Takashi
N1 - Funding Information:
This work was supported in part by the Global COE Program of Materials Integration, Tohoku University , the ICC-IMR Program at Tohoku University , the International Science and Technology Cooperation Program of China (No. 2009DFB50470 ), JSPS Grant-in-Aid for Young Scientists (B) (No. 22760550 ), and MEXT Grant-in-Aid for Scientific Research (A) (No. 22246082 ).
PY - 2012/8
Y1 - 2012/8
N2 - Barium dititanate (BaTi 2O 5) thick films were prepared on a Pt-coated Si substrate by laser chemical vapor deposition, and ac electric responses of (020)-oriented BaTi 2O 5 films were investigated using several equivalent electric circuit models. BaTi 2O 5 films in a single phase were obtained at a Ti/Ba molar ratio (m Ti/Ba) of 1.72-1.74 and deposition temperature (T dep) of 908-1065K as well as m Ti/Ba=1.95 and T dep=914-953K. (020)-oriented BaTi 2O 5 films were obtained at m Ti/Ba=1.72-1.74 and T dep=989-1051K. BaTi 2O 5 films had columnar grains, and the deposition rate reached 93μmh -1. The maximum relative permittivity of the (020)-oriented BaTi 2O 5 film prepared at T dep=989K was 653 at 759K. The model of an equivalent circuit involving a parallel combination of a resistor, a capacitor, and a constant phase element well fitted the frequency dependence of the interrelated ac electrical responses of the impedance, electric modulus, and admittance of (020)-oriented BaTi 2O 5 films.
AB - Barium dititanate (BaTi 2O 5) thick films were prepared on a Pt-coated Si substrate by laser chemical vapor deposition, and ac electric responses of (020)-oriented BaTi 2O 5 films were investigated using several equivalent electric circuit models. BaTi 2O 5 films in a single phase were obtained at a Ti/Ba molar ratio (m Ti/Ba) of 1.72-1.74 and deposition temperature (T dep) of 908-1065K as well as m Ti/Ba=1.95 and T dep=914-953K. (020)-oriented BaTi 2O 5 films were obtained at m Ti/Ba=1.72-1.74 and T dep=989-1051K. BaTi 2O 5 films had columnar grains, and the deposition rate reached 93μmh -1. The maximum relative permittivity of the (020)-oriented BaTi 2O 5 film prepared at T dep=989K was 653 at 759K. The model of an equivalent circuit involving a parallel combination of a resistor, a capacitor, and a constant phase element well fitted the frequency dependence of the interrelated ac electrical responses of the impedance, electric modulus, and admittance of (020)-oriented BaTi 2O 5 films.
KW - BaTi O
KW - BaTiO and titanates
KW - Dielectric properties
KW - Films
KW - Impedance
UR - http://www.scopus.com/inward/record.url?scp=84860573075&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860573075&partnerID=8YFLogxK
U2 - 10.1016/j.jeurceramsoc.2012.02.022
DO - 10.1016/j.jeurceramsoc.2012.02.022
M3 - Article
AN - SCOPUS:84860573075
VL - 32
SP - 2459
EP - 2467
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
IS - 10
ER -