Preparation and transparent property of the n-ZnO/p-diamond heterostructure

Cheng Xin Wang, Chun Xiao Gao, Hong Wu Liu, Yong Hao Han, Ji Feng Luo, Cai Xia Shen

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Abstract

Heterostructures of an n-type ZnO film/p-type diamond film on the {111} crystalline diamond substrate have been prepared for the first time. The electrodes of the n- and p-type semiconductors are experimentally verified to be ohmic. The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to +2 V. The turn-on voltage of the diode is 0.34 V and the highest current is about 5.0 mA as the forward voltage reaches 2 V. Moreover, the diode is optically transparent in the region of 500-700 nm wavelength.

Original languageEnglish
Pages (from-to)127-129
Number of pages3
JournalChinese Physics Letters
Volume20
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Wang, C. X., Gao, C. X., Liu, H. W., Han, Y. H., Luo, J. F., & Shen, C. X. (2003). Preparation and transparent property of the n-ZnO/p-diamond heterostructure. Chinese Physics Letters, 20(1), 127-129. https://doi.org/10.1088/0256-307X/20/1/338