Preparation and properties of silica films with higher-alkyl groups

Koh Ichi Usami, Satoshi Sugahara, Mitsuo Kobayashi, Kazuhito Sumimura, Takeo Hattori, Masakiyo Matsumura

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    Silica films with various types of alkyl groups were grown from the liquid phase, at room temperature, using alkyl tri-alkoxy silane compounds. From Fourier transform infrared (FTIR) absorption measurements, a majority of Si-alkyl bonds in the source molecules were found to remain in the grown film, while Si-alkoxy bonds were completely removed. Electrical and thermal properties have been measured comparatively for various films having dense alkyl groups. The films with the methyl group are promising for silicon production in ultra large-scale integrated circuits (Si-ULSIs) and the film having the vinyl group for non-heat-tolerant compound-semiconductor large-scale integrated circuits (LSIs).

    Original languageEnglish
    Pages (from-to)199-207
    Number of pages9
    JournalJournal of Non-Crystalline Solids
    Volume260
    Issue number3
    DOIs
    Publication statusPublished - 1999 Dec 2

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Condensed Matter Physics
    • Materials Chemistry

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  • Cite this

    Usami, K. I., Sugahara, S., Kobayashi, M., Sumimura, K., Hattori, T., & Matsumura, M. (1999). Preparation and properties of silica films with higher-alkyl groups. Journal of Non-Crystalline Solids, 260(3), 199-207. https://doi.org/10.1016/S0022-3093(99)00577-3