TY - JOUR
T1 - Preparation and properties of III-V based new diluted magnetic semiconductors
AU - Ohno, Hideo
N1 - Funding Information:
This work is a result of valuable collaboration with F. Matsukura, A. Shen, H. Munekata, A. Oiwa, Y. Iye, and S. Katsumoto, along with help in doing the experiments from Y. Sugawara. Part of this work was supported by a Grant-in-Aid, from the Ministry of Education, Science, Sports and Culture, Japan and by the Mitsubishi Foundation.
PY - 1997/9/1
Y1 - 1997/9/1
N2 - Preparation and properties of a new class of diluted magnetic semiconductors (DMS's) based on III-V compounds are reviewed. Epitaxial films of (In,Mn)As and (Ga,Mn)As, the new III-V based DMS's, are now possible by low temperature molecular beam epitaxial growth (< 300°C). The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance of SQUID magnetization measurements. The epitaxial films showed antiferromagnetic, superparamagnetic, and ferromagnetic behaviors depending on the Mn-Mn interaction, which was modified by the presence of carriers and strain in the layers. These new III-V based DMS's will open up new fields in semiconductor technology, where both semiconducting and magnetic properties play critical roles.
AB - Preparation and properties of a new class of diluted magnetic semiconductors (DMS's) based on III-V compounds are reviewed. Epitaxial films of (In,Mn)As and (Ga,Mn)As, the new III-V based DMS's, are now possible by low temperature molecular beam epitaxial growth (< 300°C). The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance of SQUID magnetization measurements. The epitaxial films showed antiferromagnetic, superparamagnetic, and ferromagnetic behaviors depending on the Mn-Mn interaction, which was modified by the presence of carriers and strain in the layers. These new III-V based DMS's will open up new fields in semiconductor technology, where both semiconducting and magnetic properties play critical roles.
KW - (Ga,Mn)As
KW - (In,Mn)As
KW - Carrier induced ferromagnetism
KW - Diluted magnetic semiconductors
KW - III-V compounds
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U2 - 10.1016/s0001-8686(97)90010-5
DO - 10.1016/s0001-8686(97)90010-5
M3 - Article
AN - SCOPUS:85088542652
VL - 71-72
SP - 61
EP - 75
JO - Advances in Colloid and Interface Science
JF - Advances in Colloid and Interface Science
SN - 0001-8686
ER -