Preparation and properties of III-V based new diluted magnetic semiconductors

Hideo Ohno

doi:10.1016/s0001-8686(97)90010-5

Preparation and properties of III-V based new diluted magnetic semiconductors

Hideo Ohno

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Research output: Contribution to journal › Article

Abstract

Preparation and properties of a new class of diluted magnetic semiconductors (DMS's) based on III-V compounds are reviewed. Epitaxial films of (In,Mn)As and (Ga,Mn)As, the new III-V based DMS's, are now possible by low temperature molecular beam epitaxial growth (< 300°C). The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance of SQUID magnetization measurements. The epitaxial films showed antiferromagnetic, superparamagnetic, and ferromagnetic behaviors depending on the Mn-Mn interaction, which was modified by the presence of carriers and strain in the layers. These new III-V based DMS's will open up new fields in semiconductor technology, where both semiconducting and magnetic properties play critical roles.

Original language	English
Pages (from-to)	61-75
Number of pages	15
Journal	Advances in Colloid and Interface Science
Volume	71-72
DOIs	https://doi.org/10.1016/s0001-8686(97)90010-5
Publication status	Published - 1997 Sep 1

Keywords

(Ga,Mn)As
(In,Mn)As
Carrier induced ferromagnetism
Diluted magnetic semiconductors
III-V compounds

ASJC Scopus subject areas

Surfaces and Interfaces
Physical and Theoretical Chemistry
Colloid and Surface Chemistry

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10.1016/s0001-8686(97)90010-5

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Ohno, H. (1997). Preparation and properties of III-V based new diluted magnetic semiconductors. Advances in Colloid and Interface Science, 71-72, 61-75. https://doi.org/10.1016/s0001-8686(97)90010-5

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abstract = "Preparation and properties of a new class of diluted magnetic semiconductors (DMS's) based on III-V compounds are reviewed. Epitaxial films of (In,Mn)As and (Ga,Mn)As, the new III-V based DMS's, are now possible by low temperature molecular beam epitaxial growth (< 300°C). The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance of SQUID magnetization measurements. The epitaxial films showed antiferromagnetic, superparamagnetic, and ferromagnetic behaviors depending on the Mn-Mn interaction, which was modified by the presence of carriers and strain in the layers. These new III-V based DMS's will open up new fields in semiconductor technology, where both semiconducting and magnetic properties play critical roles.",

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AB - Preparation and properties of a new class of diluted magnetic semiconductors (DMS's) based on III-V compounds are reviewed. Epitaxial films of (In,Mn)As and (Ga,Mn)As, the new III-V based DMS's, are now possible by low temperature molecular beam epitaxial growth (< 300°C). The magnetic properties of the epitaxial layers were revealed by the use of the anomalous Hall effect with the assistance of SQUID magnetization measurements. The epitaxial films showed antiferromagnetic, superparamagnetic, and ferromagnetic behaviors depending on the Mn-Mn interaction, which was modified by the presence of carriers and strain in the layers. These new III-V based DMS's will open up new fields in semiconductor technology, where both semiconducting and magnetic properties play critical roles.

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