Abstract
In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSi γ and (Mn,Fe)Si γ , were investigated. Band structure calculations were performed using the Mn 11 Si 19 and (Mn 31/44 Fe 13/44 ) 11 Si 19 crystal structure models of HMS to predict the conduction types and band gaps of MnSi γ and Mn 0.7 Fe 0.3 Si γ , respectively. Using a pulsed laser deposition method, p-type MnSi γ and n-type Mn 0.7 Fe 0.3 Si γ thin films with a-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSi γ thin film and 0.83(2) eV for the Mn 0.7 Fe 0.3 Si γ thin film. These results demonstrate the potential of (Mn,Fe)Si γ -based near-infrared absorption solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 700-704 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 458 |
| DOIs | |
| Publication status | Published - 2018 Nov 15 |
Keywords
- Electronic structure
- Epitaxial growth
- Fe substitution
- Higher manganese silicide
- Optical absorption
- Pulsed laser deposition
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films