Preparation and magnetotransport properties of MgO-barrier-based magnetic double tunnel junctions including nonmagnetic nanoparticles

Y. Nogi, H. Wang, F. Ernult, K. Yakushiji, S. Mitani, K. Takanashi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

MgO-barrier-based magnetic double tunnel junctions including Au or Cr nanoparticles were prepared by molecular beam epitaxy, and their magnetotransport properties were investigated. A double junction sample including Au nanoparticles showed the Coulomb blockade effect and clear magnetoresistive hysteresis loops. The observed bias voltage dependence of the resistance and magnetoresistance (MR) suggested that the MR effects of 1-2% at high bias voltages were caused by spin accumulation in the Au nanoparticles. In the case of Cr nanoparticles, a double junction with relatively low sample resistance was obtained, showing a clear Coulomb threshold.

Original languageEnglish
Article numberS06
Pages (from-to)1242-1246
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume40
Issue number5
DOIs
Publication statusPublished - 2007 Mar 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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