Abstract
Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 115-120 |
| Number of pages | 6 |
| Journal | Ferroelectrics |
| Volume | 152 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1994 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Masuda, Y., Masumoto, H., Baba, A., Goto, T., & Hirai, T. (1994). Preparation and ferroelectric properties of bi4ti3o12 and ba2nanb5o15 films. Ferroelectrics, 152(1), 115-120. https://doi.org/10.1080/00150199408017606