Preparation and ferroelectric properties of bi4ti3o12 and ba2nanb5o15 films

Yoichiro Masuda, Hiroshi Masumoto, Akira Baba, Takashi Goto, Toshio Hirai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.

Original languageEnglish
Pages (from-to)115-120
Number of pages6
JournalFerroelectrics
Volume152
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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