Preparation and ferroelectric properties of bi4ti3o12 and ba2nanb5o15 films

Yoichiro Masuda; Hiroshi Masumoto; Akira Baba; Takashi Goto; Toshio Hirai

doi:10.1080/00150199408017606

Preparation and ferroelectric properties of bi4ti3o12 and ba2nanb5o15 films

Yoichiro Masuda, Hiroshi Masumoto, Akira Baba, Takashi Goto, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.

Original language	English
Pages (from-to)	115-120
Number of pages	6
Journal	Ferroelectrics
Volume	152
Issue number	1
DOIs	https://doi.org/10.1080/00150199408017606
Publication status	Published - 1994 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.",

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AU - Masuda, Yoichiro

AU - Masumoto, Hiroshi

AU - Baba, Akira

AU - Goto, Takashi

AU - Hirai, Toshio

PY - 1994/1/1

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N2 - Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.

AB - Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.

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Preparation and ferroelectric properties of bi4ti3o12 and ba2nanb5o15 films

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