Polycrystalline and epitaxial films of a layer-structured ferroelectric B i 4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba,Na,Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics