Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition

Hidetoshi Miyazaki, Takashi Goto, Yuki Miwa, Tomoya Ohno, Hisao Suzuki, Toshitaka Ota, Minoru Takahashi

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)


LaNiO3 (LNO) thin films were prepared onto Si substrate by chemical solution deposition. The orientation of the LNO films was controlled by changing concentration of precursor solution. The resistivity of the resultant LNO films was 1.82 - 2.57×10-3Ωcm. The obtained 0.3 M-LNO film was flat surface, highly (100) orientation, and had a low resistivity of 1.85×10-3Ωcm. PbZr0.53 Ti0.47O3 was fabricated onto the resultant 0.3 M-LNO electrode, and the sample showed a good ferroelectric property.

Original languageEnglish
Pages (from-to)1005-1008
Number of pages4
JournalJournal of the European Ceramic Society
Issue number6
Publication statusPublished - 2004 Jun


  • Chemical solution deposition
  • Electrical conductivity
  • LaNiO
  • Perovskite

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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