Preparation and dielectric and electrooptic properties of bi4ti3o12 films by electron cyclotron resonance plasma sputtering deposition

Yoichiro Masuda; Akira Baba; Hiroshi Masumoto; Takashi Goto; Makoto Minakata; Toshio Hirai

doi:10.1143/JJAP.30.2212

Preparation and dielectric and electrooptic properties of bi₄ti₃o₁₂ films by electron cyclotron resonance plasma sputtering deposition

Yoichiro Masuda, Akira Baba, Hiroshi Masumoto, Takashi Goto, Makoto Minakata, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi₄Ti₃O₁₂ in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi₄Ti₃O₁₂ films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi₄Ti₃O₁₂ films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

Original language	English
Pages (from-to)	2212-2215
Number of pages	4
Journal	Japanese journal of applied physics
Volume	30
Issue number	9S
DOIs	https://doi.org/10.1143/JJAP.30.2212
Publication status	Published - 1991 Sep

Keywords

BiTiO
Brewster angle
Electron cyclotron resonance
Epitaxial growth
Ferroelectric
Layer structure
Refractive index

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Preparation and dielectric and electrooptic properties of bi₄ti₃o₁₂ films by electron cyclotron resonance plasma sputtering deposition. / Masuda, Yoichiro; Baba, Akira; Masumoto, Hiroshi; Goto, Takashi; Minakata, Makoto; Hirai, Toshio.

In: Japanese journal of applied physics, Vol. 30, No. 9S, 09.1991, p. 2212-2215.

Research output: Contribution to journal › Article › peer-review

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AU - Minakata, Makoto

AU - Hirai, Toshio

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