Preparation and dielectric and electrooptic properties of bi4ti3o12 films by electron cyclotron resonance plasma sputtering deposition

Yoichiro Masuda, Akira Baba, Hiroshi Masumoto, Takashi Goto, Makoto Minakata, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

Original languageEnglish
Pages (from-to)2212-2215
Number of pages4
JournalJapanese journal of applied physics
Volume30
Issue number9S
DOIs
Publication statusPublished - 1991 Sep

Keywords

  • BiTiO
  • Brewster angle
  • Electron cyclotron resonance
  • Epitaxial growth
  • Ferroelectric
  • Layer structure
  • Refractive index

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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