Abstract
Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.
Original language | English |
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Pages (from-to) | 2212-2215 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 30 |
Issue number | 9S |
DOIs | |
Publication status | Published - 1991 Sep |
Keywords
- BiTiO
- Brewster angle
- Electron cyclotron resonance
- Epitaxial growth
- Ferroelectric
- Layer structure
- Refractive index
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)