Preparation and dielectric and electrooptic properties of bi4ti3o12 films by electron cyclotron resonance plasma sputtering deposition

Yoichiro Masuda; Akira Baba; Hiroshi Masumoto; Takashi Goto; Makoto Minakata; Toshio Hirai

doi:10.1143/JJAP.30.2212

Preparation and dielectric and electrooptic properties of bi₄ti₃o₁₂ films by electron cyclotron resonance plasma sputtering deposition

Yoichiro Masuda, Akira Baba, Hiroshi Masumoto, Takashi Goto, Makoto Minakata, Toshio Hirai

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi₄Ti₃O₁₂ in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi₄Ti₃O₁₂ films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi₄Ti₃O₁₂ films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

Original language	English
Pages (from-to)	2212-2215
Number of pages	4
Journal	Japanese journal of applied physics
Volume	30
Issue number	9S
DOIs	https://doi.org/10.1143/JJAP.30.2212
Publication status	Published - 1991 Sep

Keywords

BiTiO
Brewster angle
Electron cyclotron resonance
Epitaxial growth
Ferroelectric
Layer structure
Refractive index

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.30.2212

Cite this

Preparation and dielectric and electrooptic properties of bi₄ti₃o₁₂ films by electron cyclotron resonance plasma sputtering deposition. / Masuda, Yoichiro; Baba, Akira; Masumoto, Hiroshi; Goto, Takashi; Minakata, Makoto; Hirai, Toshio.

In: Japanese journal of applied physics, Vol. 30, No. 9S, 09.1991, p. 2212-2215.

Research output: Contribution to journal › Article › peer-review

@article{6a7934c8b0c94a508af5744a79b21115,

title = "Preparation and dielectric and electrooptic properties of bi4ti3o12 films by electron cyclotron resonance plasma sputtering deposition",

abstract = "Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.",

keywords = "BiTiO, Brewster angle, Electron cyclotron resonance, Epitaxial growth, Ferroelectric, Layer structure, Refractive index",

author = "Yoichiro Masuda and Akira Baba and Hiroshi Masumoto and Takashi Goto and Makoto Minakata and Toshio Hirai",

year = "1991",

month = sep,

doi = "10.1143/JJAP.30.2212",

language = "English",

volume = "30",

pages = "2212--2215",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9S",

}

TY - JOUR

T1 - Preparation and dielectric and electrooptic properties of bi4ti3o12 films by electron cyclotron resonance plasma sputtering deposition

AU - Masuda, Yoichiro

AU - Baba, Akira

AU - Masumoto, Hiroshi

AU - Goto, Takashi

AU - Minakata, Makoto

AU - Hirai, Toshio

PY - 1991/9

Y1 - 1991/9

N2 - Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

AB - Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

KW - BiTiO

KW - Brewster angle

KW - Electron cyclotron resonance

KW - Epitaxial growth

KW - Ferroelectric

KW - Layer structure

KW - Refractive index

UR - http://www.scopus.com/inward/record.url?scp=0026226473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026226473&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.2212

DO - 10.1143/JJAP.30.2212

M3 - Article

AN - SCOPUS:0026226473

VL - 30

SP - 2212

EP - 2215

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9S

ER -