Preparation and Characterization of Low-k Silica Film Incorporated with Methylene Groups

Satoshi Sugahara, Tomohiro Kadoya, Koh Ichi Usami, Takeo Hattori, Masakiyo Matsumura

    Research output: Contribution to journalArticlepeer-review

    37 Citations (Scopus)

    Abstract

    We have successfully demonstrated chemical vapor deposition of a silica film in which some of oxygen atoms of the pure silica network are replaced to methylene (-CH2-) groups. The as-deposited film was thermally unstable owing to the unwanted decomposition reaction of the methylene group with the dense H2O in the film. It was found that the film could be dehydrated without decomposition of the methylene group by low temperature annealing in a XeF2, ambient. The dehydrated film showed not only good insulating and low-k characteristics (resistivity of 1015 Ω cm, breakdown field of 3.3 MV/cm, and k of 2.8), but also good thermal properties, such as good thermal stability and high thermal conductivity.

    Original languageEnglish
    Pages (from-to)F120-F126
    JournalJournal of the Electrochemical Society
    Volume148
    Issue number6
    DOIs
    Publication statusPublished - 2001 Jun

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Surfaces, Coatings and Films
    • Electrochemistry
    • Materials Chemistry

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