Preparation and characterization of Bi-perovskite oxide films for piezo applications

Shintaro Yasui, Hiroshi Naganuma, Soichiro Okamura, Takashi Iijima, Ken Nishida, Takashi Katoda, Hiroshi Uchida, Seiichiro Koda, Hiroshi Funakubo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of BiFeO3-BiScO3 (BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO3-based films by replacing electrically-unstable Fe3+ for stable Sc 3+. The films with chemical composition of Bi(Fe1-x, Scx)O3 were fabricated on (111)Pt/TiO2/SiO 2 /(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe3+ and Sc3+ was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization - electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages102-103
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: 2007 May 272007 May 31

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period07/5/2707/5/31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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