Preoxide-controlled oxidation for very thin oxide films

Koji Makihara, Akinobu Teramoto, Kou Nakamura, Myoung Youn Kwon, Mizuho Morita, Tadahiro Ohmi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Very thin oxide films with high insulating performance and high reliability are formed by controlling preoxide growth with an ultraclean oxidation method during heating of the wafer to thermal oxidation temperature. The current level through the preoxide-controlled ultraclean oxide is lower than that through the oxide incorporating a thicker preoxide, and the preoxide-controlled ultraclean oxide has high reliability with respect to hot electron injection.

Original languageEnglish
Pages (from-to)294-297
Number of pages4
JournalJapanese journal of applied physics
Volume32
Issue number1 S
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Keywords

  • Insulating performance
  • Preoxide
  • Reliability
  • Ultraclean oxidation
  • Very thin oxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Makihara, K., Teramoto, A., Nakamura, K., Youn Kwon, M., Morita, M., & Ohmi, T. (1993). Preoxide-controlled oxidation for very thin oxide films. Japanese journal of applied physics, 32(1 S), 294-297. https://doi.org/10.1143/JJAP.32.294