Abstract
Very thin oxide films with high insulating performance and high reliability are formed by controlling preoxide growth with an ultraclean oxidation method during heating of the wafer to thermal oxidation temperature. The current level through the preoxide-controlled ultraclean oxide is lower than that through the oxide incorporating a thicker preoxide, and the preoxide-controlled ultraclean oxide has high reliability with respect to hot electron injection.
| Original language | English |
|---|---|
| Pages (from-to) | 294-297 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 32 |
| Issue number | 1 S |
| DOIs | |
| Publication status | Published - 1993 Jan |
| Externally published | Yes |
Keywords
- Insulating performance
- Preoxide
- Reliability
- Ultraclean oxidation
- Very thin oxide
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Makihara, K., Teramoto, A., Nakamura, K., Youn Kwon, M., Morita, M., & Ohmi, T. (1993). Preoxide-controlled oxidation for very thin oxide films. Japanese journal of applied physics, 32(1 S), 294-297. https://doi.org/10.1143/JJAP.32.294