Preoxide-controlled oxidation for very thin gate oxide

K. Makihara, A. Teramoto, K. Nakamura, M. Morita, T. Ohmi

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Very thin gate oxide films with high insulating performance and high reliability are grown by controlling preoxide growth during the wafer heating up to thermal oxidation temperature using ultraclean oxidation method. The current level through the preoxide-controlled oxide is lower than that through the oxide including thicker preoxide, and the preoxide-controlled oxide has high reliability in term of hot electron injection.

Original languageEnglish
Pages120-122
Number of pages3
Publication statusPublished - 1992 Dec 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Makihara, K., Teramoto, A., Nakamura, K., Morita, M., & Ohmi, T. (1992). Preoxide-controlled oxidation for very thin gate oxide. 120-122. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .