Preferential nucleation along SiO2 steps in amorphous Si

M. Moniwa, M. Miyao, R. Tsuchiyama, A. Ishizaka, M. Ichikawa, H. Sunami, T. Tokuyama

    Research output: Contribution to journalArticlepeer-review

    28 Citations (Scopus)

    Abstract

    Annealing characteristics for amorphous Si film deposited on an SiO 2 layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO 2 steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO2 and Si, is considered to be the driving force.

    Original languageEnglish
    Pages (from-to)113-115
    Number of pages3
    JournalApplied Physics Letters
    Volume47
    Issue number2
    DOIs
    Publication statusPublished - 1985

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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