Preferential nucleation along SiO2 steps in amorphous Si

M. Moniwa; M. Miyao; R. Tsuchiyama; A. Ishizaka; M. Ichikawa; H. Sunami; T. Tokuyama

doi:10.1063/1.96286

Preferential nucleation along SiO₂ steps in amorphous Si

M. Moniwa, M. Miyao, R. Tsuchiyama, A. Ishizaka, M. Ichikawa, H. Sunami, T. Tokuyama

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29 Citations (Scopus)

Abstract

Annealing characteristics for amorphous Si film deposited on an SiO ₂ layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO ₂ steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO₂ and Si, is considered to be the driving force.

Original language	English
Pages (from-to)	113-115
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	2
DOIs	https://doi.org/10.1063/1.96286
Publication status	Published - 1985

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Annealing characteristics for amorphous Si film deposited on an SiO 2 layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO 2 steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO2 and Si, is considered to be the driving force.",

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AU - Moniwa, M.

AU - Miyao, M.

AU - Tsuchiyama, R.

AU - Ishizaka, A.

AU - Ichikawa, M.

AU - Sunami, H.

AU - Tokuyama, T.

PY - 1985

Y1 - 1985

N2 - Annealing characteristics for amorphous Si film deposited on an SiO 2 layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO 2 steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO2 and Si, is considered to be the driving force.

AB - Annealing characteristics for amorphous Si film deposited on an SiO 2 layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO 2 steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO2 and Si, is considered to be the driving force.

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Preferential nucleation along SiO₂ steps in amorphous Si

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