Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuko Nozawa, Takeshi Toyama, Fumiko Yano, Masao Inoue, Akio Nishida, Yasuyoshi Nagai

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.

Original languageEnglish
Article number106601
JournalApplied Physics Express
Volume9
Issue number10
DOIs
Publication statusPublished - 2016 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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