Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis

Haruhisa Shigeyama, Takenao Nemoto, Toshimitsu Yokobori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.

    Original languageEnglish
    Title of host publicationAdvanced Metallization Conference 2010
    Pages229-230
    Number of pages2
    Publication statusPublished - 2010 Dec 1
    EventAdvanced Metallization Conference 2010 - Albany, NY, United States
    Duration: 2010 Oct 52010 Oct 7

    Publication series

    NameAdvanced Metallization Conference (AMC)
    ISSN (Print)1540-1766

    Other

    OtherAdvanced Metallization Conference 2010
    CountryUnited States
    CityAlbany, NY
    Period10/10/510/10/7

    ASJC Scopus subject areas

    • Materials Science(all)
    • Industrial and Manufacturing Engineering

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