TY - GEN
T1 - Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis
AU - Shigeyama, Haruhisa
AU - Nemoto, Takenao
AU - Yokobori, Toshimitsu
PY - 2010/12/1
Y1 - 2010/12/1
N2 - The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.
AB - The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.
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M3 - Conference contribution
AN - SCOPUS:79957641855
SN - 9781617822810
T3 - Advanced Metallization Conference (AMC)
SP - 229
EP - 230
BT - Advanced Metallization Conference 2010
T2 - Advanced Metallization Conference 2010
Y2 - 5 October 2010 through 7 October 2010
ER -