Abstract
The atomic flux divergence due to electromigration has been formulated considering two-dimensional distributions of current density and temperature and the line structures of both polycrystalline line and bamboo line. And the divergence, AFDgen, has been identified as a governing parameter of electromigration damage by experimental verification. In this study, a prediction method of the lifetime and failure site in bamboo line is proposed based on the numerical simulation of electromigration failure process in bamboo line by using AFDgen. The usefulness of this prediction method, which has the advantage to universally predict the line failure by using only the film characteristic constants, is discussed in the light of comparison of the prediction of both lifetime and failure location in the bamboo line with experiment.
Original language | English |
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Pages | 1/- |
Publication status | Published - 1999 |
Event | InterPACK '99: Pacific RIM/ASME International Intersociety Electronics Photonic Packaging Conference 'Advances in Electronic Packaging 1999' - Maui, HI, USA Duration: 1999 Jun 13 → 1999 Jun 19 |
Other
Other | InterPACK '99: Pacific RIM/ASME International Intersociety Electronics Photonic Packaging Conference 'Advances in Electronic Packaging 1999' |
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City | Maui, HI, USA |
Period | 99/6/13 → 99/6/19 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering