Prediction of abnormal etching profiles in high-aspect-ratio via/hole etching using on-wafer monitoring system

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

For the prediction of abnormal etching profiles, an ion trajectory prediction system has recently been developed. In this system, sheath modeling was combined with the on-wafer monitoring technique for accurate prediction. This system revealed that sidewall conductivity strongly affects the charge accumulation and ion trajectory in high-aspect-ratio holes. It was also found that the accumulated charge in adjacent holes is one of the reasons for the generation of twisting profiles according to analysis using the system. We presume that the prediction system is an effective tool for developing nanoscale fabrication.

Original languageEnglish
Title of host publicationSpringerBriefs in Applied Sciences and Technology
PublisherSpringer Verlag
Pages19-31
Number of pages13
DOIs
Publication statusPublished - 2014 Jan 1

Publication series

NameSpringerBriefs in Applied Sciences and Technology
Volume102
ISSN (Print)2191-530X
ISSN (Electronic)2191-5318

Keywords

  • Bowing
  • Etch stop
  • High-aspect-ratio holes
  • On-wafer charge-up sensor
  • Sidewall conductivity
  • Twisting

ASJC Scopus subject areas

  • Biotechnology
  • Chemical Engineering(all)
  • Mathematics(all)
  • Materials Science(all)
  • Energy Engineering and Power Technology
  • Engineering(all)

Fingerprint Dive into the research topics of 'Prediction of abnormal etching profiles in high-aspect-ratio via/hole etching using on-wafer monitoring system'. Together they form a unique fingerprint.

Cite this