Precise resistance measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator

Yuma Okazaki; Takehiko Oe; Minoru Kawamura; Ryutaro Yoshimi; Shuji Nakamura; Shintaro Takada; Masataka Mogi; Kei S. Takahashi; Atsushi Tsukazaki; Masashi Kawasaki; Yoshinori Tokura; Nobu Hisa Kaneko

doi:10.1063/1.5145172

Precise resistance measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator

Yuma Okazaki, Takehiko Oe, Minoru Kawamura, Ryutaro Yoshimi, Shuji Nakamura, Shintaro Takada, Masataka Mogi, Kei S. Takahashi, Atsushi Tsukazaki, Masashi Kawasaki, Yoshinori Tokura, Nobu Hisa Kaneko

Materials Property Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The accuracy of Hall resistance in the quantum anomalous Hall effect has been studied at zero magnetic field using Cr_x(Bi,Sb) 2 - x Te₃-based magnetic heterostructure films of topological insulators. The measured deviation of the Hall resistance from its theoretical value h / e 2 was less than 2 ppm when the source drain current was 30 nA. This result has verified that the quantization of the Hall resistance is very accurate in the magnetic heterostructure films and in the previously reported uniformly doped films.

Original language	English
Article number	143101
Journal	Applied Physics Letters
Volume	116
Issue number	14
DOIs	https://doi.org/10.1063/1.5145172
Publication status	Published - 2020 Apr 6

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5145172

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Precise resistance measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator. / Okazaki, Yuma; Oe, Takehiko; Kawamura, Minoru; Yoshimi, Ryutaro; Nakamura, Shuji; Takada, Shintaro; Mogi, Masataka; Takahashi, Kei S.; Tsukazaki, Atsushi; Kawasaki, Masashi; Tokura, Yoshinori; Kaneko, Nobu Hisa.

In: Applied Physics Letters, Vol. 116, No. 14, 143101, 06.04.2020.

Research output: Contribution to journal › Article › peer-review

Okazaki, Yuma ; Oe, Takehiko ; Kawamura, Minoru ; Yoshimi, Ryutaro ; Nakamura, Shuji ; Takada, Shintaro ; Mogi, Masataka ; Takahashi, Kei S. ; Tsukazaki, Atsushi ; Kawasaki, Masashi ; Tokura, Yoshinori ; Kaneko, Nobu Hisa. / Precise resistance measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator. In: Applied Physics Letters. 2020 ; Vol. 116, No. 14.

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title = "Precise resistance measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator",

abstract = "The accuracy of Hall resistance in the quantum anomalous Hall effect has been studied at zero magnetic field using Crx(Bi,Sb) 2 - x Te3-based magnetic heterostructure films of topological insulators. The measured deviation of the Hall resistance from its theoretical value h / e 2 was less than 2 ppm when the source drain current was 30 nA. This result has verified that the quantization of the Hall resistance is very accurate in the magnetic heterostructure films and in the previously reported uniformly doped films.",

author = "Yuma Okazaki and Takehiko Oe and Minoru Kawamura and Ryutaro Yoshimi and Shuji Nakamura and Shintaro Takada and Masataka Mogi and Takahashi, {Kei S.} and Atsushi Tsukazaki and Masashi Kawasaki and Yoshinori Tokura and Kaneko, {Nobu Hisa}",

note = "Funding Information: This research was supported by JSPS/MEXT Grant-in-Aid for Scientific Research (Nos. JP15H05867 and JP15H05853), JST CREST (No. JPMJCR16F1), and JSPS KAKENHI grant (Nos. JP17H04846, JP18H04229, JP18H01156, and JP18H05258). ",

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AU - Okazaki, Yuma

AU - Oe, Takehiko

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AU - Yoshimi, Ryutaro

AU - Nakamura, Shuji

AU - Takada, Shintaro

AU - Mogi, Masataka

AU - Takahashi, Kei S.

AU - Tsukazaki, Atsushi

AU - Kawasaki, Masashi

AU - Tokura, Yoshinori

AU - Kaneko, Nobu Hisa

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PY - 2020/4/6

Y1 - 2020/4/6

N2 - The accuracy of Hall resistance in the quantum anomalous Hall effect has been studied at zero magnetic field using Crx(Bi,Sb) 2 - x Te3-based magnetic heterostructure films of topological insulators. The measured deviation of the Hall resistance from its theoretical value h / e 2 was less than 2 ppm when the source drain current was 30 nA. This result has verified that the quantization of the Hall resistance is very accurate in the magnetic heterostructure films and in the previously reported uniformly doped films.

AB - The accuracy of Hall resistance in the quantum anomalous Hall effect has been studied at zero magnetic field using Crx(Bi,Sb) 2 - x Te3-based magnetic heterostructure films of topological insulators. The measured deviation of the Hall resistance from its theoretical value h / e 2 was less than 2 ppm when the source drain current was 30 nA. This result has verified that the quantization of the Hall resistance is very accurate in the magnetic heterostructure films and in the previously reported uniformly doped films.

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