Abstract
The accuracy of Hall resistance in the quantum anomalous Hall effect has been studied at zero magnetic field using Crx(Bi,Sb) 2 - x Te3-based magnetic heterostructure films of topological insulators. The measured deviation of the Hall resistance from its theoretical value h / e 2 was less than 2 ppm when the source drain current was 30 nA. This result has verified that the quantization of the Hall resistance is very accurate in the magnetic heterostructure films and in the previously reported uniformly doped films.
Original language | English |
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Article number | 143101 |
Journal | Applied Physics Letters |
Volume | 116 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2020 Apr 6 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)