Precise patterning of Si O2 -based glass by low-temperature nanoimprint lithography assisted by UV irradiation on both faces using Glasia as a precursor

Motoki Okinaka, Hiroshi Tsushima, Yoshifumi Ichinose, Emi Watanabe, Keiichi Yanagisawa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Precise patterning of glass has been achieved by low-temperature nanoimprint lithography using Glasia as a precursor. The main constitute of the Glasia is polysilane polymer. The polysilane with a simple structure enables the rapid patterning of line and space structures ranging from 50 nm to 25 μm and air-hole structures with a high aspect ratio of 5 at temperatures lower than 80 °C. UV irradiation on both faces transforms the polysilane into Si O2 -based glass and improves the properties of glass through photo-oxidation. The patterned structure baked at 250 °C shows no shrinkage. It is suggested that the incorporation of the oxygen into the patterned film during heat treatment minimizes the shrink due to the evaporation of organic side chains. The patterned Si O2 -based glass material withstands ultrasonication in acetone, and has about twice the Vickers hardness of poly(methylmethacrylate) (PMMA).

Original languageEnglish
Pages (from-to)1393-1397
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number4
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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