TY - JOUR
T1 - Precise patterning of Si O2 -based glass by low-temperature nanoimprint lithography assisted by UV irradiation on both faces using Glasia as a precursor
AU - Okinaka, Motoki
AU - Tsushima, Hiroshi
AU - Ichinose, Yoshifumi
AU - Watanabe, Emi
AU - Yanagisawa, Keiichi
AU - Tsukagoshi, Kazuhito
AU - Aoyagi, Yoshinobu
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - Precise patterning of glass has been achieved by low-temperature nanoimprint lithography using Glasia as a precursor. The main constitute of the Glasia is polysilane polymer. The polysilane with a simple structure enables the rapid patterning of line and space structures ranging from 50 nm to 25 μm and air-hole structures with a high aspect ratio of 5 at temperatures lower than 80 °C. UV irradiation on both faces transforms the polysilane into Si O2 -based glass and improves the properties of glass through photo-oxidation. The patterned structure baked at 250 °C shows no shrinkage. It is suggested that the incorporation of the oxygen into the patterned film during heat treatment minimizes the shrink due to the evaporation of organic side chains. The patterned Si O2 -based glass material withstands ultrasonication in acetone, and has about twice the Vickers hardness of poly(methylmethacrylate) (PMMA).
AB - Precise patterning of glass has been achieved by low-temperature nanoimprint lithography using Glasia as a precursor. The main constitute of the Glasia is polysilane polymer. The polysilane with a simple structure enables the rapid patterning of line and space structures ranging from 50 nm to 25 μm and air-hole structures with a high aspect ratio of 5 at temperatures lower than 80 °C. UV irradiation on both faces transforms the polysilane into Si O2 -based glass and improves the properties of glass through photo-oxidation. The patterned structure baked at 250 °C shows no shrinkage. It is suggested that the incorporation of the oxygen into the patterned film during heat treatment minimizes the shrink due to the evaporation of organic side chains. The patterned Si O2 -based glass material withstands ultrasonication in acetone, and has about twice the Vickers hardness of poly(methylmethacrylate) (PMMA).
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U2 - 10.1116/1.2759936
DO - 10.1116/1.2759936
M3 - Article
AN - SCOPUS:34547574686
VL - 25
SP - 1393
EP - 1397
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -