Precise evaluation of charging effect on SiO2 particles by simulation of holograms

Yoshitaka Aoyama, Young Gil Park, Chang Woo Lee, Daisuke Shindo

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The charging effect due to the electron irradiation in spherical SiO2 particles of 250 nm in diameter has been analyzed by electron holography. Electron holograms of a charged SiO2 particle on the side surface of the carbon film were simulated taking into account the electric shielding effect due to the carbon film. In order to compare the observed hologram and the simulated holograms quantitatively, the residual index between the observed and simulated images was evaluated. Through the quantitative analysis taking into account the shielding effect with the limited side surface area of the carbon film, the amount of the charge was evaluated to be 3.38 × 10-17 C for the current density of incident electron beam at 0.24 A/m2 without an objective aperture.

    Original languageEnglish
    Pages (from-to)474-477
    Number of pages4
    JournalMaterials Transactions
    Volume43
    Issue number3
    DOIs
    Publication statusPublished - 2002 Mar

    Keywords

    • Charging effect
    • Electric charge
    • Electron holography
    • Quantification
    • Residual index
    • Simulation

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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