Precise evaluation of charging effect on SiO2 particles by simulation of holograms

Yoshitaka Aoyama, Young Gil Park, Chang Woo Lee, Daisuke Shindo

Research output: Contribution to journalArticlepeer-review

Abstract

The charging effect due to the electron irradiation in spherical SiO2 particles of 250 nm in diameter has been analyzed by electron holography. Electron holograms of a charged SiO2 particle on the side surface of the carbon film were simulated taking into account the electric shielding effect due to the carbon film. In order to compare the observed hologram and the simulated holograms quantitatively, the residual index between the observed and simulated images was evaluated. Through the quantitative analysis taking into account the shielding effect with the limited side surface area of the carbon film, the amount of the charge was evaluated to be 3.38 × 10-17 C for the current density of incident electron beam at 0.24 A/m2 without an objective aperture.

Original languageEnglish
Pages (from-to)474-477
Number of pages4
JournalMaterials Transactions
Volume43
Issue number3
DOIs
Publication statusPublished - 2002 Mar

Keywords

  • Charging effect
  • Electric charge
  • Electron holography
  • Quantification
  • Residual index
  • Simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Precise evaluation of charging effect on SiO<sub>2</sub> particles by simulation of holograms'. Together they form a unique fingerprint.

Cite this