Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, K. Usuda

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We have investigated chemical states and band offsets in SiNSi by photoemission spectroscopy and x-ray absorption spectroscopy. N 1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6-5.7 eV from valence-band, N 1s core level, and N K -edge-absorption spectra. Furthermore, time-dependent measurements of N 1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.

Original languageEnglish
Article number102901
JournalApplied Physics Letters
Volume87
Issue number10
DOIs
Publication statusPublished - 2005 Sep 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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