Precise control of nanowire formation based on polysilane for photoelectronic device application

Satoshi Tsukuda, Shu Seki, Akinori Saeki, Takahiro Kozawa, Seiichi Tagawa, Masaki Sugimoto, Akira Idesaki, Shigeru Tanaka

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A High-energy single ion trajectory in a Si-based polymer thin film produces a cross-linked polymer nanowire with the length of 10-1000 nm and the thickness of 4.0-19.4 nm (radius of the cross section). The energy density deposited by incident ions and the molecular weight of the target polymer materials principally determine the thickness of the nanowires at any discrete radius in this range. Surface treatment of a substrate completely controls the adhesion of the nanowires, which makes it possible to pattern the nanowire distribution on the substrate. Nanogap platinum electrodes with 100nm gap width are fabricated on the nanowire dispersed SiO2 substrate by a lift-off method with electron beam lithography techniques. Current-voltage analysis of the nanowires in the gap clearly indicates intrinsic semiconductive features based on crosslinked polysilanes.

Original languageEnglish
Pages (from-to)3810-3814
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number6 B
DOIs
Publication statusPublished - 2004 Jun 1
Externally publishedYes

Keywords

  • Gelation
  • Ion beam
  • Nanogap
  • Nanowire
  • Polysilans
  • Selective adhesion
  • Semiconductivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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