Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technology

Katsuya Oda, Makoto Miura, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A continuous-epitaxial-growth technique, using a cold-wall rapid thermal UHV/CVD system, for Si/SiGe multi-layers containing different doping types has been developed. Extremely high phosphorous-doping in the silicon layer grown by LPCVD with Si2H6 can be achieved without high-temperature activation annealing, and good crystallinity of the Si layer results in very low resistivity. High-temperature surface cleaning prior to the epitaxial growth can be omitted, since contamination occurring during wafer transfer was minimized by using a UHV transfer chamber. Good crystallinity of the HBT structure after the whole fabrication process was confirmed by reciprocal lattice space mapping of high-resolution X-ray diffraction. These results indicate that the developed continuous-epitaxial-growth technique gives a major advantage in maintaining crystal quality of Si/SiGe multi-layers for future ultra-high-speed devices.

Original languageEnglish
Pages (from-to)98-100
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3
Externally publishedYes

Keywords

  • Continuous-epitaxial-growth
  • Crystallinity
  • HBT
  • Phosphorous doping
  • Rapid thermal UHV/CVD
  • Reciprocal lattice space mapping
  • Si/SiGe multi-layer
  • Surface cleaning
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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