La3Ta0.5Ga5.5O14 (LTG) single crystals, which have no phase transition up to the melting point, were heat-treated in air at temperatures from 1000°C to 1450°C for 10 h. LaTaO4 (LT) and LaGaO3 (LG), which coexist with LTG in the three-phase region on the Ga-poor side, precipitated on the surface of the crystal for heat treatments above 1300°C because of Ga evaporation during the heat treatment. The Ga-poor state near the surface of the 1450°C heat-treated specimen was confirmed by electron probe micro-analysis measurements. The electrical resistivity of LTG single crystals decreased by heat treatment in the range of 1000°C to 1200°C for 10 h in air, where no precipitation was observed, whereas the resistivity increased with heat treatment over 1400°C for 10 h in air. The electrical resistivity of the Ga-poor surface region was higher than that of the interior.
|Number of pages||9|
|Journal||IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|Publication status||Published - 2011 Jun 1|
ASJC Scopus subject areas
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering