Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka

Research output: Contribution to journalConference article

Abstract

The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

Original languageEnglish
JournalMaterials Research Society Symposium Proceedings
Volume1591
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2013 JSAP-MRS Joint Symposia - Kyoto, Japan
Duration: 2013 Sep 162013 Sep 20

Keywords

  • Si
  • crystalline
  • defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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