Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by annealing at a high temperature in an ambient N2 (70%)+O2 (30%) atmosphere. The number of precipitates detected by cross-sectional X-ray topography increased with increasing annealing time. Because preannealing accompanying silicon oxidation in an ambient Ar+O2 atmosphere prevented the precipitates formation, interstitial silicon is considered to eliminate the origin of precipitate.

Original languageEnglish
Pages (from-to)923-927
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume16
Issue number3
DOIs
Publication statusPublished - 2013 Jun 1
Externally publishedYes

Keywords

  • Crystalline defect
  • Floating zone silicon wafer
  • Precipitate
  • X-ray topography
  • α-Si N

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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